OLED Capacitor Electrode Segmentation for Doping Precision
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Solution Overview
Problem
Existing OLED display technologies face challenges in achieving enhanced electric characteristics for capacitors, particularly in the doping process of electrodes, which can lead to defects and reduced capacitance due to inappropriate conductivity.
Innovation Solution
The use of an impurity-doped polysilicon film as a first electrode and a second electrode with a convex and concave structure, where the concave electrode portion is thinner than the convex and gate electrodes, allows for improved impurity doping and electrical properties, simplifying the manufacturing process by eliminating the need for additional doping masks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional capacitor electrode structure is used, then the manufacturing process requires additional doping masks and complex steps, but the electric characteristics and capacitance are insufficient
Solution Approach 1:
The second capacitor electrode is segmented into convex electrode portions and concave electrode portions with different thicknesses. The concave portions are thinner and allow impurity penetration, while the convex portions provide structural support and electrical connectivity. This segmentation enables different regions of the same electrode to serve different functions: the thin concave regions facilitate doping of the first electrode, while the thick convex regions maintain electrode integrity and conductivity.
Solution Approach 2:
Different portions of the second capacitor electrode have different local properties: the concave electrode portions have reduced thickness to enable impurity transmission, while the convex electrode portions maintain full thickness for electrical performance. This local variation in thickness allows the electrode to simultaneously achieve both doping facilitation and electrical functionality without requiring separate doping masks.
2Ease of manufacture
If the second capacitor electrode is made uniformly thin to allow impurity doping, then the doping process is simplified, but the electrical characteristics and capacitance are degraded
Solution Approach 1:
The second capacitor electrode is divided into regions of different thicknesses rather than being uniformly thin. The concave portions are thin enough to allow impurity diffusion, while the convex portions maintain sufficient thickness to preserve capacitance and electrical characteristics. This eliminates the need for complex doping masks while maintaining electrode performance.
3Manufacturing precision
If the concave electrode portion is made thinner, then impurity doping of the first electrode is enhanced, but the structural strength is reduced
Solution Approach 1:
The electrode structure implements local quality variation where only the concave portions are thin to enable precise impurity doping, while the convex portions maintain full thickness for structural strength. This localized thinning achieves doping precision without compromising overall electrode integrity.
Solution Approach 2:
The electrode is segmented into load-bearing convex portions and doping-facilitated concave portions. The convex portions provide mechanical strength and electrical connectivity, while the concave portions serve as impurity transmission channels. This functional segmentation allows thin regions to exist without weakening the overall structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the electrical characteristics of both electrodes, ensuring appropriate conductivity and capacitance while simplifying the manufacturing process, reducing production costs and complexity.
Implementation Method 1
each of the semiconductor layer and first capacitor electrode including an impurity-doped polysilicon layer
Data Source
AI summary
An organic light emitting diode display includes a substrate main body, a semiconductor layer and a first capacitor electrode on the substrate main body, bottom surfaces of the semiconductor layer and first capacitor electrode being substantially coplanar, and each of the semiconductor layer and first capacitor electrode including an impurity-doped polysilicon layer, a gate insulating layer on the semiconductor layer and the first capacitor electrode, a gate electrode on the semiconductor layer with the gate insulating layer therebetween, and a second capacitor electrode on the first capacitor electrode with the gate insulating layer therebetween, the second capacitor electrode including a convex electrode portion and a concave electrode portion, the concave electrode portion being thinner than each of the convex electrode portion and the gate electrode.