OLED Storage Capacitor Using Hydrogen-Diffused Oxide Semiconductor
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Solution Overview
Problem
Current OLED display manufacturing methods require additional processes to form capacitor electrodes, which can increase complexity and cost, and existing capacitors may not achieve optimal capacitance due to material limitations.
Innovation Solution
The use of an oxide semiconductor for the capacitor lower electrode, where hydrogen diffuses from an interlayer insulating layer to conduct the oxide semiconductor, allowing for the formation of a capacitor lower electrode without additional processes and enabling the same material to be used for both the gate and capacitor upper electrodes, thereby simplifying the manufacturing process and enhancing capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If additional processes are used to form capacitor electrodes, then manufacturing precision can be improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent merges the formation of the capacitor lower electrode with the existing oxide semiconductor layer deposition process. The oxide semiconductor layer is deposited to form both the transistor active layer and the capacitor lower electrode in a single process step, eliminating the need for separate electrode formation processes and reducing overall manufacturing complexity
Solution Approach 2:
The oxide semiconductor layer serves multiple functions: it acts as the active layer for the thin film transistor and simultaneously serves as the lower electrode for the storage capacitor. This multi-functionality reduces the number of distinct materials and processes required, simplifying the manufacturing workflow while maintaining precision
2Manufacturing precision
If additional processes are used to form capacitor electrodes, then manufacturing precision can be improved, but manufacturing cost increases
Solution Approach 1:
The patent combines the capacitor lower electrode formation with the oxide semiconductor layer deposition, reducing the total number of manufacturing steps. This consolidation decreases equipment usage time, material consumption, and labor costs while maintaining the required precision through the inherent properties of the oxide semiconductor material
Solution Approach 2:
By using the oxide semiconductor layer for dual purposes (transistor active layer and capacitor electrode), the patent eliminates the need for separate electrode materials and deposition processes, directly reducing material costs and manufacturing overhead while preserving electrode formation precision
3Ease of manufacture
If conventional materials are used for capacitor electrodes, then manufacturing simplicity is maintained, but capacitance performance is limited
Solution Approach 1:
The patent changes the material parameter by using oxide semiconductor with specific properties (high dielectric constant, appropriate band gap) for the capacitor lower electrode. This material parameter change enables higher capacitance values and better performance while still using standard deposition techniques, maintaining manufacturing simplicity
Solution Approach 2:
The storage capacitor is formed using composite structure with oxide semiconductor as the lower electrode and hydrogen diffusion to create conducting regions. This composite approach combines the advantages of oxide semiconductor materials with hydrogenation treatment to achieve superior capacitance performance while using existing manufacturing processes
4Reliability
If hydrogen diffusion is used to conduct oxide semiconductor, then capacitance is enhanced, but process time increases
Solution Approach 1:
The patent performs preliminary hydrogen diffusion during the oxide semiconductor layer deposition process or immediately afterward, before subsequent manufacturing steps. This timing strategy allows the hydrogen diffusion to occur when the structure is most accessible, reducing the required diffusion time while ensuring complete conductivity formation in the capacitor electrode region
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the OLED display manufacturing process by eliminating the need for additional electrode formation steps and ensures high capacitance through the use of hydrogen-diffused oxide semiconductor capacitors, improving overall display performance and efficiency.
Implementation Method 1
hydrogen diffusing from an interlayer insulating layer into the second oxide semiconductor layer wherein the second oxide semiconductor layer becomes a conductor
Data Source
AI summary
An organic light emitting diode display, includes a substrate; a thin film transistor and a storage capacitor that are disposed and spaced apart from each other on the substrate; and an organic light emitting diode that is connected to the thin film transistor. The storage capacitor includes a capacitor lower electrode, a capacitor insulating layer disposed on the capacitor lower electrode, and a capacitor upper electrode disposed on the capacitor insulating layer. The capacitor lower electrode is a conducting oxide semiconductor into which hydrogen has diffused.