OLED Charge Generation Layer for Voltage Reduction

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Solution Overview

Problem

Current organic light-emitting diodes (OLEDs) have higher drive voltage and lower luminous efficiency due to imbalanced electron and hole transport, requiring further performance improvement.

Innovation Solution

Incorporating a charge generation layer with a P-type semiconductor material doped in the hole injection material and ytterbium-doped electron transport material, arranged between emitting layers to enhance hole and electron injection and transport, achieving a P-I-N structure that balances charge quantities and lowers drive voltage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If conventional organic light-emitting diode structure is used, then device simplicity is maintained, but drive voltage is high and luminous efficiency is low

Engineering Contradiction:
Improveluminous efficiencyVSAvoidstructure complexity
Core Design Contradiction:
Use of energy by moving objectVSDevice complexity

Solution Approach 1:

The charge generation layer is divided into two distinct units: a first layer unit containing hole injection material and P-type semiconductor material, and a second layer unit containing electron transport material doped with ytterbium. This segmentation allows independent optimization of hole and electron transport, improving charge balance and luminous efficiency without excessive complexity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent employs composite material structures in both layer units. The first layer unit combines hole injection material with P-type semiconductor material (containing triphenylamine and electron acceptor groups), while the second layer unit uses electron transport material doped with ytterbium (1-5% by volume). These composite materials enhance charge generation and transport efficiency

Inventive Principle:
Principle #40Composite materials

2Reliability

If conventional charge transport layers are used, then manufacturing simplicity is maintained, but charge balance between electrons and holes is poor

Engineering Contradiction:
Improvecharge balanceVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

Each layer unit is designed with specific local properties: the first layer unit is optimized for hole injection and transport using P-type semiconductor material with electron acceptor groups, while the second layer unit is optimized for electron transport using ytterbium-doped electron transport material. This local quality differentiation achieves superior charge balance

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent optimizes specific parameters including the volume concentration of ytterbium dopants (1% to 5%) in the electron transport material and the molecular structure parameters of the P-type semiconductor material (where n≥1 and R′ is substituted aryl or hetero aryl with electron acceptor groups). These parameter optimizations improve charge balance while maintaining manufacturability

Inventive Principle:
Principle #35Parameter changes

3Power

If higher drive voltage is used, then sufficient charge injection is achieved, but power consumption increases

Engineering Contradiction:
Improvedrive voltageVSAvoidpower consumption
Core Design Contradiction:
PowerVSLoss of energy

Solution Approach 1:

The patent changes material parameters to achieve lower drive voltage: using P-type semiconductor material with electron acceptor groups in the first layer unit enhances hole injection, while ytterbium doping (1-5% volume concentration) in the electron transport material of the second layer unit improves electron transport. These parameter changes enable sufficient charge injection at reduced voltage, lowering power consumption

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration improves luminous efficiency and reduces drive voltage, balancing electron and hole quantities, resulting in enhanced OLED performance with lower power consumption.

Implementation Method 1

a P-type semiconductor material doped in the hole injection material

Methodology Applied
Scientific EffectDoping: Dopants

Implementation Method 2

an electron transport material doped with ytterbium, where a volume concentration of ytterbium dopants in the electron transport material ranges from 1% to 5%

Methodology Applied
Scientific EffectDoping: Dopants

Implementation Method 3

the charge generation layer includes a first layer unit and a second layer unit which are arranged in sequence along the direction far away from the cathode, the first layer unit includes a hole injection material and a P-type semiconductor material doped in the hole injection material, and the second layer unit includes an electron transport material doped with ytterbium

Methodology Applied
Scientific EffectCharge generation:

Implementation Method 4

Organic Light-Emitting Diode (OLED) occupies an important position in the field of display

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS10312293B2Organic light-emitting diode, display panel and display device
Publication Date: 2019.06.04 WUHAN TIANMA MICRO ELECTRONICS CO LTD
  • US10312293B2 patent drawing
  • US10312293B2 patent drawing
  • US10312293B2 patent drawing

AI summary

The application discloses an organic light-emitting diode for a display panel. The organic light-emitting diode includes an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between every two adjacent emitting layers, wherein the charge generation layer includes a first layer unit and a second layer unit which are arranged in sequence, the first layer unit includes a hole injection material and a P-type semiconductor material doped in the hole injection material, and the second layer unit includes an electron transport material and ytterbium doped in the electron transport material, wherein a volume concentration of ytterbium doped in the electron transport material ranges from 1% to 5%.