OLED Display Contact Hole Patterning With Fewer Masks
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Solution Overview
Problem
The high cost and decreased production yield of organic light-emitting display devices due to the need for multiple expensive masks in the manufacturing process.
Innovation Solution
A method of manufacturing organic light-emitting display devices that reduces the number of masks used by forming a photoresist film pattern with different depths using a halftone mask, allowing for simultaneous creation of contact holes that expose both the lower electrode pattern and the oxide semiconductor layer, thereby simplifying the process and reducing manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple masks are used to form different contact holes in separate photolithography processes, then the precision of contact hole formation is improved, but the manufacturing cost increases and production yield decreases
Solution Approach 1:
The photoresist film is divided into multiple layers (first photoresist film and second photoresist film) with different etch selectivities. Each layer is used to form contact holes at different depths through selective etching processes, eliminating the need for multiple masks while maintaining precision.
Solution Approach 2:
The invention changes the etch selectivity parameter by using photoresist films with different etch resistance properties. The first photoresist film has higher etch selectivity than the second photoresist film, allowing differential etching rates to create contact holes at different depths from a single mask pattern.
2Manufacturing precision
If multiple photolithography processes are used to form contact holes at different depths, then the quality of contact holes is improved, but the productivity decreases
Solution Approach 1:
Multiple contact hole formation operations that previously required separate photolithography processes are merged into a single etching process. The multi-layer photoresist structure allows simultaneous formation of first contact holes (exposing lower electrode) and second contact holes (exposing oxide semiconductor layer) in one step, improving productivity.
Solution Approach 2:
The photoresist films are pre-formed with different thicknesses and etch selectivities before the etching process. This preliminary preparation enables the etching process to automatically create contact holes at different depths without requiring multiple separate operations, thereby improving production efficiency.
3Manufacturing precision
If multiple masks are used in the manufacturing process, then the precision of pattern transfer is improved, but the manufacturing cost increases
Solution Approach 1:
The invention extracts the mask from the process by using the photoresist film pattern itself as the defining element. The pattern is transferred to the substrate through the etching process using the photoresist as a self-aligned mask, eliminating the need for separate expensive masks while maintaining pattern transfer precision.
Solution Approach 2:
The photoresist film serves multiple functions: it acts as both the pattern definition layer and the etching mask. By making the photoresist film multi-functional, the invention eliminates the need for separate masks, reducing manufacturing cost while maintaining precision through the photoresist's inherent pattern fidelity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the number of masks required, lowering manufacturing costs and enhancing productivity by simplifying the process while maintaining the quality of the organic light-emitting display devices.
Implementation Method 1
forming a photoresist film pattern including first and second holes, which have different depths, on the interlayer insulating film
Data Source
AI summary
A method of manufacturing an organic light-emitting display device is provided. The method includes: forming a lower electrode pattern on a substrate, which includes a transistor area and a capacitor area, to correspond to the transistor area and forming a buffer layer on the substrate including the lower electrode pattern; forming a thin-film transistor including an oxide semiconductor layer on the buffer layer; forming an interlayer insulating film on the thin-film transistor; forming a photoresist film pattern including first and second holes, which have different depths, on the interlayer insulating film; and forming a first contact hole, which exposes the lower electrode pattern, and second contact holes, which expose the oxide semiconductor layer, at the same time using the photoresist film pattern.