OLED Semiconductor Layout With Expanded Contact Regions
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In high-resolution OLED displays, interlayer alignment errors can lead to disconnection of semiconductor members due to etchant penetration through misaligned contact holes, resulting in non-uniform lighting between adjacent pixels.
Innovation Solution
The OLED display incorporates a non-linear semiconductor layer with expansion semiconductor parts having a wider width than the narrow semiconductor parts, which enclose contact holes to prevent etchant penetration and maintain current flow paths, even with interlayer alignment errors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the pixel size is reduced to achieve higher resolution, then the resolution is improved, but the manufacturing precision deteriorates due to smaller process margins
Solution Approach 1:
The semiconductor layer is designed with non-uniform width: a narrow portion (first width) in the channel region and an expanded portion (second width greater than the first width) at the contact hole region. This local variation in geometry compensates for alignment errors specifically at the contact hole without affecting the overall pixel size or channel performance.
Solution Approach 2:
The expanded semiconductor portion is formed in advance at the contact hole location to create a buffer zone that prevents etchant penetration before alignment errors can cause damage. This preliminary structural preparation ensures that even if contact holes are misaligned, the semiconductor layer remains protected.
2Measurement precision
If contact holes are made smaller to increase pixel density, then the pixel density is improved, but the reliability deteriorates due to etchant penetration through misaligned holes
Solution Approach 1:
The expanded semiconductor portion acts as a cushion or buffer zone that absorbs the impact of misaligned contact holes. By creating this extra width at the contact hole region, the design provides a safety margin that prevents etchant from penetrating into the semiconductor layer, thereby protecting the reliability of the semiconductor member connection.
3Reliability
If the semiconductor layer width is increased to prevent etchant penetration, then the reliability is improved, but the area occupied increases
Solution Approach 1:
Instead of uniformly increasing the semiconductor layer width across the entire structure, the invention applies width expansion only locally at the contact hole region. The narrow portion maintains the original width for optimal channel performance, while the expanded portion provides protection only where needed, minimizing the overall area increase.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively prevents the opening of semiconductor parts due to etchant penetration, ensuring uniform lighting between adjacent pixels in high-resolution OLED structures.
Implementation Method 1
Electrons injected from a cathode electrode and holes injected from an anode electrode are bonded to each other in the organic light emitting layer to form excitons. Light is emitted while the excitons discharge energy.
Data Source
AI summary
An organic light-emitting diode display is disclosed. In one aspect, a semiconductor layer is on a substrate, and the semiconductor layer is non-linear. A gate metal line is on the semiconductor layer, and an insulating layer covering the semiconductor layer and the gate metal line and having a plurality of contact holes connected to the semiconductor layer. A data metal line is on the insulating layer and electrically connected to the semiconductor layer via a selected one of the contact holes. An OLED is electrically connected to the gate metal line and the data metal line, and the semiconductor layer includes a narrow semiconductor layer having a first width and an expansion semiconductor layer formed adjacent to the selected contact hole and having a second width greater than the first width.


