OLED Electrode Layout for High-Speed N-MOS Display Driving
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Solution Overview
Problem
Existing display devices using P-MOS driving structures face limitations in achieving high-speed driving due to the need to invert the structure of light emitting elements, which results in decreased efficiency and increased driving voltage, making it difficult to achieve high-speed operation above 120 Hz in high resolution modes.
Innovation Solution
A display device and manufacturing method that connect the cathode with a transistor without reversing the structure of the light emitting diode, utilizing a specific electrode configuration and layer structure to enable high-speed N-MOS driving, including a substrate, transistor, auxiliary electrode, and light emitting diode layer with a hole transport and electron transport layer, where the second electrode contacts the auxiliary electrode at its side surface, allowing direct connection to the transistor for efficient electron control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If P-MOS driving structure is used, then the light emitting diode structure can be maintained in conventional configuration, but high-speed driving above 120 Hz cannot be achieved due to mobility limitations
Solution Approach 1:
The patent inverts the conventional connection configuration by connecting the second electrode (cathode) to the transistor drain electrode through an auxiliary electrode, rather than connecting the first electrode (anode) to the transistor. This inverted connection enables N-MOS driving with high-speed performance while maintaining the conventional light emitting diode structure, resolving the contradiction between driving speed and structure complexity.
2Speed
If N-MOS driving is used to achieve high-speed operation, then driving speed above 120 Hz can be achieved, but the light emitting diode structure must be inverted which decreases luminous efficiency
Solution Approach 1:
The patent inverts only the electrical connection configuration (connecting second electrode to transistor) while maintaining the physical structure and layer arrangement of the light emitting diode in conventional configuration. This selective inversion enables N-MOS high-speed driving without the structural inversion that would decrease luminous efficiency, thus resolving the contradiction between driving speed and energy loss.
Solution Approach 2:
The patent applies different connection configurations to different electrodes: the first electrode (anode) is connected to the pixel electrode in conventional manner, while the second electrode (cathode) is connected to the transistor through auxiliary electrode. This local differentiation in connection quality enables N-MOS driving without requiring global structural inversion, preserving luminous efficiency while achieving high-speed operation.
3Speed
If N-MOS driving with inverted light emitting diode structure is used, then high-speed driving can be achieved, but quenching of excitons increases reducing overall efficiency
Solution Approach 1:
The patent inverts the connection configuration (second electrode to transistor) to enable N-MOS driving while maintaining the conventional light emitting diode structure. This prevents the structural inversion that causes exciton quenching, thus achieving high-speed driving without compromising exciton stability and overall device reliability.
Data Source
AI summary
A display device includes: a substrate; a transistor that is disposed on the substrate; an auxiliary electrode that is connected with the transistor; a first electrode that is disposed on a same layer as the auxiliary electrode; a light emitting diode layer that is disposed on the first electrode; and a second electrode that is disposed on the light emitting diode layer, wherein the second electrode contacts the auxiliary electrode at a side surface thereof.