OLED Electrode Interface Structure for Adjacent Pixel Leakage Control
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Solution Overview
Problem
Display devices with an organic layer common to all pixels face challenges in suppressing the leakage of drive current between adjacent light emitting elements.
Innovation Solution
The display device incorporates a plurality of first electrodes for each pixel, an insulating layer containing a silicon compound, a first interface layer with a silicon oxide, and an organic layer with a light emitting layer, all of which are designed to minimize current leakage by controlling the thickness and composition of the insulating and interface layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating film is provided in an inter-element region between a plurality of light emitting elements, then current leakage between adjacent light emitting elements is suppressed, but the device complexity and manufacturing complexity increase due to additional grooves and insulating film formation steps
Solution Approach 1:
The patent changes the material composition parameter of the insulating layer by incorporating a silicon nitride layer with specific nitrogen content (0.1-5.0 at%) within the silicon compound. This compositional parameter change provides both insulating properties for current leakage suppression and positive charge characteristics, eliminating the need for separate groove structures and reducing overall device complexity.
Solution Approach 2:
The patent uses a composite insulating layer structure comprising a silicon oxide layer and a silicon nitride layer with specific nitrogen content. This composite material approach combines the insulating properties of silicon oxide with the positive charge characteristics of silicon nitride, achieving current leakage suppression through material composition rather than complex structural modifications.
2Reliability
If a positively charged inorganic nitride is used to form the insulating layer, then current leakage is suppressed through positive charge effect, but the manufacturing precision requirements increase for controlling film thickness and composition
Solution Approach 1:
The patent specifies precise compositional parameters for the silicon nitride layer, with nitrogen content controlled at 0.1-5.0 at% and specific thickness ranges. These parameter specifications enable consistent positive charge effect for current leakage suppression while providing clear manufacturing targets that balance precision requirements with achievable production control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses the leakage of drive current between adjacent light emitting elements, thereby maintaining high luminous efficiency and preventing abnormal color emission in the display device.
Implementation Method 1
an insulating layer containing a silicon compound, provided between the first electrodes, and covering a peripheral edge portion of the first electrode
Implementation Method 2
a first interface layer containing a first silicon oxide and provided at an interface between the first electrode and the insulating layer
Data Source
AI summary
A display device includes a plurality of first electrodes each provided for each pixel, an insulating layer containing a silicon compound, provided between the first electrodes, and covering a peripheral edge portion of the first electrode, a first interface layer containing a first silicon oxide and provided at an interface between the first electrode and the insulating layer, an organic layer including a light emitting layer, and provided on the first electrodes and the insulating layer, commonly to all of pixels, and a second electrode provided on the organic layer. The insulating layer contains a second silicon oxide on a surface portion on a side of the organic layer.