OLED Interlayer Insulating Structure for Low-Crosstalk Wiring
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As organic light emitting diode displays are manufactured with higher resolution and larger areas, the increased number of thin film transistors and wirings leads to challenges in minimizing parasitic capacitance and crosstalk between adjacent components, affecting image quality and signal integrity.
Innovation Solution
The use of a substrate with alternating inorganic and organic interlayer insulating layers, specifically an organic first interlayer and an inorganic second interlayer, between the gate electrode and data wire, reduces parasitic capacitance and crosstalk by controlling the dielectric constant and distance between components, thereby improving signal transmission and reducing the risk of short-circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the number of thin film transistors and wirings is increased to achieve high resolution and large area, then the display resolution and area are improved, but parasitic capacitance and crosstalk between adjacent components increase
Solution Approach 1:
The patent changes the dielectric parameter (dielectric constant) of the insulating layers by using alternating organic and inorganic layers, where the organic layer has a lower dielectric constant than the inorganic layer. This parameter change reduces parasitic capacitance between adjacent wirings while maintaining the high resolution and large area display requirements.
Solution Approach 2:
The patent employs a composite structure of alternating organic and inorganic interlayer insulating layers. The organic layer (e.g., polymer material) and inorganic layer (e.g., silicon oxide or silicon nitride) are combined to create a multi-layer dielectric structure that optimizes both insulation performance and mechanical properties, effectively reducing parasitic capacitance.
2Measurement precision
If the number of thin film transistors and wirings is increased to achieve high resolution and large area, then the display resolution and area are improved, but crosstalk between adjacent components increases
Solution Approach 1:
The patent changes the dielectric parameter (dielectric constant) of the insulating layers by using alternating organic and inorganic layers, where the organic layer has a lower dielectric constant than the inorganic layer. This parameter change reduces parasitic capacitance between adjacent wirings while maintaining the high resolution and large area display requirements.
Solution Approach 2:
The patent employs a composite structure of alternating organic and inorganic interlayer insulating layers. The organic layer (e.g., polymer material) and inorganic layer (e.g., silicon oxide or silicon nitride) are combined to create a multi-layer dielectric structure that optimizes both insulation performance and mechanical properties, effectively reducing parasitic capacitance.
3Object-generated harmful factors
If alternating organic and inorganic interlayer insulating layers are used to reduce parasitic capacitance, then parasitic capacitance and crosstalk are suppressed, but device structure complexity increases
Solution Approach 1:
The patent segments the interlayer insulating structure into alternating organic and inorganic layers. This segmentation allows each layer to contribute different properties (organic for flexibility and low dielectric constant, inorganic for stability and barrier properties), achieving reduced parasitic capacitance while maintaining manufacturability through established thin-film deposition techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses parasitic capacitance and crosstalk, enhancing image quality and signal integrity in organic light emitting diode displays by optimizing the dielectric properties and spacing between the data wire and capacitor electrode.
Implementation Method 1
an organic first interlayer insulating layer between the gate electrode and the data wire
Implementation Method 2
an inorganic second interlayer insulating layer between the first interlayer insulating layer and the data wire
Data Source
AI summary
Disclosed herein is an organic light emitting diode display, including a substrate, a first thin film transistor including a first active pattern on the substrate and a first gate electrode on the first active pattern, a data wire on the first gate electrode, a first interlayer insulating layer between the first gate electrode and the data wire, a second interlayer insulating layer positioned the first interlayer insulating layer and the data wire, and an organic light emitting diode positioned on the data wire and connected to the first active pattern.