OLED Semiconductor Structure With Integrated Light Shielding

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Solution Overview

Problem

In current semiconductor processes, light from the outside or from the OLED device can affect the performance of the device structure layer due to the absence of a light shielding layer between the OLED device and the substrate.

Innovation Solution

A light shielding layer is introduced between the OLED device and the substrate, which can be made of nitrogen-containing compounds like SiN, SiON, or SiCN, to block external and internal light from entering the device structure layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a light shielding layer is added between the OLED device and the substrate, then the device performance is protected from light interference, but the manufacturing process becomes more complex

Engineering Contradiction:
Improvedevice performanceVSAvoidmanufacturing process
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The light shielding layer is integrated into the existing dielectric layer structure, merging the light shielding function with the insulating function. This combination approach protects device performance while avoiding the need for a completely separate manufacturing process, thus resolving the contradiction between reliability improvement and manufacturing complexity

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The dielectric layer is designed to serve multiple functions: electrical insulation and light shielding. By making the dielectric layer multi-functional, the patent achieves light interference protection without adding separate dedicated light shielding layers, thereby maintaining manufacturing process simplicity while improving device reliability

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If a light shielding layer is introduced to block light from affecting the device structure layer, then device performance is maintained, but the manufacturing steps increase

Engineering Contradiction:
Improvedevice performanceVSAvoidmanufacturing efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The light shielding capability is built into the dielectric layer during the initial fabrication stages, before the OLED device is assembled. This preliminary incorporation of light shielding functionality eliminates the need for additional post-assembly manufacturing steps, thereby maintaining productivity while ensuring device performance

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

By combining the light shielding function with the dielectric layer formation process, the patent avoids separate manufacturing steps for light shielding. This merging approach maintains manufacturing efficiency while achieving the goal of protecting device performance from light interference

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The light shielding layer effectively prevents light from impacting the performance of the device structure layer, maintaining optimal device functionality while simplifying the manufacturing process without requiring additional photomasks.

Implementation Method 1

a light shielding layer is disposed between the organic light-emitting diode (OLED) device and the substrate... when the light from the outside or the light from the OLED device enters the device structure layer, the performance of the device in the device structure layer may be affected

Methodology Applied
Scientific EffectLight shielding: Absorption (EM radiation)

Data Source

PatentUS20250323175A1Semiconductor structure and manufacturing method thereof
Publication Date: 2025.10.16 UNITED MICROELECTRONICS CORP
  • US20250323175A1 patent drawing
  • US20250323175A1 patent drawing
  • US20250323175A1 patent drawing

AI summary

Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate, a device structure layer, a dielectric layer, an organic light-emitting diode (OLED) device, a light shielding layer and a conductive via. The device structure layer is disposed on the substrate. The dielectric layer is disposed on the device structure layer. The OLED device is disposed on the dielectric layer. The light shielding layer is disposed between the dielectric layer and the device structure layer, or between the dielectric layer and the OLED device, or between the dielectric layer and the device structure layer and between the dielectric layer and the OLED device. The conductive via is disposed in the dielectric layer and the light shielding layer, and is electrically connected to the OLED device and the device structure layer.