OLED Mask Buffer Pattern for Meshing Accuracy
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Solution Overview
Problem
Poor meshing accuracy of masks used in OLED display devices leads to low product yield due to sagging caused by gravity and difficulty in smoothly transmitting the pull of the mesh as it opens from the shelter area to the opening area.
Innovation Solution
A mask design that includes a buffer unit set in the shelter area, corresponding to the opening unit set in the opening area, which buffers the sudden change of stress at the boundary between the opening and shelter areas, ensuring smooth transmission of the mesh pull and reducing sagging.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a mask is used in OLED display device manufacturing, then evaporation of cathode layer and other structures can be achieved, but poor meshing accuracy results in low product yield
Solution Approach 1:
The mask is divided into opening area and shelter area with distinct functions. The opening area contains opening patterns for material deposition, while the shelter area contains buffer patterns for stress management. This segmentation allows each area to be optimized independently for its specific function, improving overall meshing accuracy and product yield.
Solution Approach 2:
Different regions of the mask are designed with different structural qualities. The opening area has a structure optimized for precise material deposition, while the shelter area has a buffer pattern structure optimized for stress buffering. This local differentiation ensures that each region performs its specific function effectively, resolving the meshing accuracy issue.
2Device complexity
If the mask structure is simplified to reduce quality, then manufacturing cost decreases, but sagging due to gravity increases reducing meshing accuracy
Solution Approach 1:
The buffer pattern in the shelter area acts as a pre-designed stress cushioning structure. It anticipates and compensates for the sagging effect of gravity on the mask before the actual deposition process occurs. This beforehand cushioning allows the mask to maintain its structural integrity and meshing accuracy without requiring excessive overall complexity.
3Ease of manufacture
If the boundary between opening area and shelter area is sharp, then manufacturing is easier, but sudden stress change causes mesh pull transmission issues
Solution Approach 1:
The buffer pattern introduces a curved, transitional structure at the boundary between the opening area and shelter area. This curved transition replaces a sharp angular boundary, allowing stress to be distributed gradually rather than suddenly. The curvature enables smooth mesh pull transmission while maintaining clear area definition for manufacturing purposes.
Data Source
AI summary
A mask includes an opening area and a shelter area adjacent to the opening area, the opening area includes an opening pattern, the shelter area includes a buffer pattern adapted to the opening pattern. This application achieves a purpose that a sudden change of stress at a boundary between the opening area and the shelter area is buffered, thereby ensuring that the pull of the mesh as it opens may be smoothly transmitted from the shelter area to the opening area. In addition, this application may also effectively improve meshing accuracy of the mask, thereby improving a yield of vapor deposition products.