Open Mask Half-Etching for OLED Line Protection

The patent introduces a third dimension (vertical height) by forming a protruding structure on the mask at the position corresponding to the line crossing in the non-display area. This protrusion creates a physical gap between the mask and the lines, preventing contact damage while maintaining the mask's patterning function in the display area.

The protruding structure on the mask acts as an intermediary element that separates the mask body from the vulnerable line region. This intermediate structure allows the mask to maintain its positioning function while preventing direct contact between the mask and the lines, thus protecting the lines from damage.

By adding vertical height through the protruding structure, the patent creates a spatial buffer zone between the mask and the lines. This allows the mask to be positioned close to the substrate for accurate deposition while the protrusion prevents harmful contact with the lines in the non-display area.

The mask is modified locally at the specific position corresponding to the line crossing, creating a protruding structure only where needed. This localized modification protects the vulnerable line region without affecting the mask's overall positioning and deposition accuracy function.

Instead of uniformly modifying the entire mask, the patent applies a localized protruding structure only at the specific position where lines cross in the non-display area. This maintains the mask's simplicity elsewhere while providing targeted protection and source material blocking where needed.

The mask structure is segmented into different functional regions: the main mask body for blocking source material and forming the thin film layer, and a localized protruding structure for protecting lines. This segmentation allows each part to perform its specific function efficiently without unnecessary complexity.