Organic Light Emitting Display Device With Overlapping Storage Capacitor

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Solution Overview

Problem

The existing organic light emitting display devices face challenges in implementing high resolution due to insufficient process margin and yield, primarily because the storage capacitor area does not overlap with the transistor area, and signal lines are spaced apart, limiting the arrangement density.

Innovation Solution

The solution involves forming storage capacitors on a substrate with at least one buffer layer, where transistors overlap the capacitors, and light emitting elements are connected to the transistors, allowing the capacitor area to overlap the emission area and transistor area, and signal lines to overlap with buffer layers, thereby ensuring a sufficient process margin.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the storage capacitor area is spaced apart from the transistor area in the horizontal direction, then the parasitic capacitor influence is reduced, but the arrangement density is insufficient and high resolution cannot be implemented

Engineering Contradiction:
Improveparasitic capacitor influenceVSAvoidarrangement density
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent transitions from a two-dimensional planar arrangement where capacitor and transistor areas are spaced horizontally to a three-dimensional overlapping arrangement. The capacitor area is positioned to overlap the transistor area in the vertical direction, utilizing the z-dimension to resolve the spatial conflict. This allows signal lines to be arranged in the horizontal direction without increasing parasitic capacitance, thereby improving arrangement density while maintaining electrical performance.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If signal lines are arranged spaced apart in the horizontal direction, then parasitic capacitor influence is minimized, but process margin becomes insufficient

Engineering Contradiction:
Improveparasitic capacitor influenceVSAvoidprocess margin
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The patent relocates the capacitor area from a horizontal arrangement to a vertical overlapping position above the transistor area. This dimensional change creates additional horizontal space that can be utilized for signal line routing. Signal lines can now be positioned closer together in the horizontal direction without increasing parasitic capacitance, thereby increasing process margin while maintaining electrical isolation.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Adaptability or versatility

If multiple components are arranged on the substrate, then device functionality is achieved, but yield is lowered due to insufficient process margin

Engineering Contradiction:
Improvedevice functionalityVSAvoidyield
Core Design Contradiction:
Adaptability or versatilityVSProductivity

Solution Approach 1:

The patent merges the capacitor area with the transistor area by positioning them to overlap vertically. This consolidation reduces the total area occupied by discrete components and creates a more compact pixel structure. The overlapping arrangement increases process margin by providing buffer space around critical features, thereby improving manufacturing yield while maintaining all required device functionalities including storage capacitance, transistor operation, and light emission.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS10276643B2Organic light emitting display device and method of manufacturing the same
Publication Date: 2019.04.30 LG DISPLAY CO LTD
  • US10276643B2 patent drawing
  • US10276643B2 patent drawing
  • US10276643B2 patent drawing

AI summary

Disclosed are an organic light emitting display device which may implement high resolution and a method of manufacturing the same. A storage capacitor disposed on a substrate overlaps a plurality of transistors connected to a light emitting element with at least one buffer layer including an organic buffer layer interposed therebetween and, thus, a sufficient process margin may be assured, high resolution may be implemented and yield may be improved.