OLED Display Panel Oxide Transistor Layout for IGZO Stability
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Solution Overview
Problem
The poor stability of indium gallium zinc oxide (IGZO) transistors in OLED display panels affects the performance of driver and pixel circuits, leading to instability in the display effect.
Innovation Solution
A display panel design that includes a first transistor with a silicon active layer and a second transistor with an oxide semiconductor active layer, where the oxygen concentration in the first insulating layer is lower than in the second insulating layer, improving the stability of the second transistor and ensuring good performance of the driver circuit.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If IGZO is used as the active layer material for the second transistor, then the leakage current is reduced, but the stability of the transistor deteriorates
Solution Approach 1:
The patent applies local quality by creating different oxygen concentrations in different insulating layers surrounding the IGZO active layer. The first insulating layer has a lower oxygen concentration while the second insulating layer has a higher oxygen concentration, optimizing each layer's properties for its specific function: reducing leakage current while maintaining transistor stability.
Solution Approach 2:
The patent changes the oxygen concentration parameter in the insulating layers to resolve the contradiction. By controlling the oxygen concentration in the first insulating layer to be lower than in the second insulating layer, the patent achieves both low leakage current and high transistor stability through parameter optimization.
Data Source
AI summary
Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor and a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.