OLED Passivation Layer Deposition With Plasma-Thermal Radical Decomposition

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Solution Overview

Problem

Existing methods for forming insulating layers in organic light emitting devices using chemical vapor deposition result in imperfect decomposition of source gases, leading to reduced use efficiency and high hydrogen content, which can cause moisture-related damage and performance degradation.

Innovation Solution

A hybrid chemical vapor deposition method that combines plasma and thermal decomposition to form insulating layers, where gases requiring high and low energy for decomposition are processed separately to minimize hydrogen content, using a dual gas injection system and a heating body to ensure thorough decomposition.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If plasma decomposition method is used for high energy gases, then decomposition efficiency is improved, but process complexity increases

Engineering Contradiction:
Improvedecomposition efficiencyVSAvoidprocess complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent segments the gas decomposition process into two distinct pathways: plasma decomposition for high energy gases (first gas) and thermal decomposition for low energy gases (second gas). This segmentation allows each gas type to be processed by the most appropriate method, optimizing decomposition efficiency while managing process complexity through structured separation of processing routes.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies different decomposition methods to different gases based on their specific energy requirements. The first gas (requiring high energy) is subjected to plasma decomposition, while the second gas (requiring low energy) undergoes thermal decomposition. This local quality approach ensures that each gas receives the appropriate level and type of energy input for optimal decomposition.

Inventive Principle:
Principle #3Local quality

2Productivity

If only plasma decomposition is used, then decomposition capability is improved, but source gas use efficiency decreases

Engineering Contradiction:
Improvedecomposition capabilityVSAvoidsource gas use efficiency
Core Design Contradiction:
ProductivityVSLoss of energy

Solution Approach 1:

The patent changes the energy input parameters by providing two separate gas pathways: one through the plasma generating region and another through the heating body. This parameter change allows optimization of energy input for different gas types, improving source gas use efficiency by matching the decomposition method to the specific energy requirements of each gas.

Inventive Principle:
Principle #35Parameter changes

3Device complexity

If thermal decomposition only is used, then process simplicity is improved, but decomposition completeness deteriorates

Engineering Contradiction:
Improveprocess simplicityVSAvoiddecomposition completeness
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent segments the decomposition task between plasma and thermal processes, with plasma handling the difficult-to-decompose high energy gas and thermal process handling the easier low energy gas. This segmentation achieves complete decomposition without requiring the entire process to be overly complex.

Inventive Principle:
Principle #1Segmentation

4Ease of manufacture

If insulating layer contains high hydrogen content, then formation process is simplified, but moisture resistance deteriorates

Engineering Contradiction:
Improveformation process simplicityVSAvoidmoisture resistance
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the decomposition parameters by using plasma for high energy gases and thermal methods for low energy gases, achieving thorough decomposition that reduces hydrogen content in the insulating layer. This parameter change improves moisture resistance while maintaining manufacturing feasibility through the dual-pathway approach.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method achieves a high-quality insulating layer with reduced hydrogen content, effectively preventing moisture penetration and enhancing the performance and durability of organic light emitting devices by maximizing source gas use efficiency.

Implementation Method 1

The first radical is formed by passing a first gas through a plasma generating region

Methodology Applied
Scientific EffectPlasma decomposition: Plasma

Implementation Method 2

the second radical is formed by passing a second gas through the heating body. Power may be supplied to the heating body to heat the heating body

Methodology Applied
Scientific EffectThermal decomposition: Thermolysis

Implementation Method 3

An insulating layer is then formed on the second electrode by reacting first and second radicals

Methodology Applied
Scientific EffectChemical reaction: Chemical Bonding

Data Source

PatentUS8383208B2Method of fabricating organic light emitting device
Publication Date: 2013.02.26 SAMSUNG DISPLAY CO LTD
  • US8383208B2 patent drawing
  • US8383208B2 patent drawing
  • US8383208B2 patent drawing

AI summary

Methods of fabricating an organic light emitting device using plasma and/or thermal decomposition are provided. An insulating layer is formed by reacting first and second radicals. The first radical is formed by passing a first gas through a plasma generating region and a heating body, and the second radical is formed by passing a second gas through the heating body. The methods improve the characteristics of the resulting insulating layer and increase the use efficiency of the source gas by substantially decomposing the source gas. The insulating layer can be a passivation layer formed on an organic light emitting device. The methods use plasma apparatuses such as an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatuses or plasma enhanced chemical vapor deposition (PECVD) apparatuses.