Organic Light Emitting Device Photo Diode Manufacturing Method
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Solution Overview
Problem
Organic light emitting devices face issues with deteriorating film quality and luminance over time due to organic materials, and external light reflection affects contrast, while conventional photo diodes have low light detection efficiency and unintentional impurity doping in the intrinsic region.
Innovation Solution
A method for manufacturing an organic light emitting device with a photo diode that includes a reflective film to enhance light detection efficiency and prevent LDD doping by covering the intrinsic region with a gate metal during doping, allowing for controlled luminance based on external light intensity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a photo diode is added to control luminance, then light detection efficiency is improved, but device complexity increases
Solution Approach 1:
The patent combines the photo diode structure with the existing transistor structure by integrating the intrinsic region formation into the transistor manufacturing process. The gate metal layer serves dual purposes: as part of the transistor gate and as a doping barrier for the photo diode intrinsic region, thereby merging two functional structures into one unified design that improves light detection while managing complexity.
Solution Approach 2:
The gate metal layer is designed to perform multiple functions simultaneously: it acts as the gate electrode for the transistor and as a protective barrier during the doping process for the photo diode's intrinsic region. This multi-functionality allows the same structural element to serve different purposes in different stages of device operation and manufacturing, improving efficiency without proportionally increasing complexity.
2Reliability
If impurities are injected to form doping regions, then electrical conductivity is improved, but intrinsic region purity deteriorates due to LDD doping
Solution Approach 1:
The gate metal layer is deposited on the semiconductor layer before the doping process begins. This preliminary placement of the gate metal creates a physical barrier that prevents impurities from reaching the intrinsic region during subsequent doping steps. By preparing this protective structure in advance, the patent ensures that the intrinsic region remains pure while still allowing proper doping of other regions.
Solution Approach 2:
The gate metal layer acts as an intermediary barrier between the doping sources and the intrinsic region. During the doping process, this metal layer mediates by blocking impurity diffusion into the intrinsic region while allowing the doping process to proceed normally in other areas. This intermediary structure enables selective protection of the intrinsic region without interfering with the overall doping process.
3Illumination intensity
If organic thin film layer is used for light emission, then viewing angle and contrast are improved, but film quality deteriorates with time leading to luminance reduction
Solution Approach 1:
The photo diode provides feedback by detecting external light intensity and enabling the device to adjust its luminance output accordingly. This feedback mechanism allows the organic light emitting device to compensate for environmental lighting conditions, maintaining optimal viewing contrast and quality over time by dynamically adjusting performance based on detected light levels.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method improves light detection efficiency and maintains film quality by reflecting external light onto the photo diode, preventing unintentional doping, and enabling controlled luminance adjustment, thus enhancing the performance and longevity of organic light emitting devices.
Implementation Method 1
A method for manufacturing an organic light emitting device with a photo diode that includes a reflective film to enhance light detection efficiency
Implementation Method 2
photo diode that includes a reflective film to enhance light detection efficiency
Data Source
AI summary
A method for manufacturing an organic light emitting device including a photo diode and a transistor includes forming a first semiconductor layer and a second semiconductor layer on separate portions of a buffer layer formed on the substrate; forming a gate metal layer on the first semiconductor layer, the gate metal layer covering a central region of the first semiconductor layer; forming a high-concentration P doping region and a high-concentration N doping region in the first semiconductor layer by injecting impurities into regions of the first semiconductor layer not covered by the gate metal layer to form the photodiode; forming a source and drain region and a channel region in the second semiconductor layer; and removing the gate metal layer from the central region of the first semiconductor layer by etching and simultaneously forming a gate electrode by etching, the gate electrode being insulated from the channel region of the second semiconductor layer, to form the transistor.