OLED Pixel Capacitor Layout to Raise Capacitance Without Crosstalk

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Solution Overview

Problem

Existing display devices face challenges in increasing capacitance and improving image quality due to crosstalk caused by coupling capacitors between data lines and gate electrodes, which affects the performance of organic light-emitting diodes.

Innovation Solution

The design incorporates a capacitor structure with overlapping electrodes and insulating layers, including a first capacitor electrode with stepped portions and a second capacitor electrode that overlaps the gap between adjacent electrodes, increasing surface areas and capacitance while minimizing coupling capacitors between data lines and gate electrodes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If a capacitor is formed between a data line and a gate electrode, then capacitance is increased, but crosstalk occurs affecting image quality

Engineering Contradiction:
ImprovecapacitanceVSAvoidcrosstalk
Core Design Contradiction:
Quantity of substanceVSObject-generated harmful factors

Solution Approach 1:

An insulating layer is introduced as an intermediary between the data line and gate electrode. This insulating layer acts as a mediator that allows capacitance to be formed while preventing direct electrical coupling that would cause crosstalk, thus resolving the contradiction between increasing capacitance and reducing harmful interference

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The capacitor structure is segmented into distinct components: a first capacitor electrode connected to the data line, a second capacitor electrode connected to the gate electrode, and an insulating layer between them. This segmentation allows the capacitor to store charge while preventing direct signal coupling, thereby increasing capacitance without causing crosstalk

Inventive Principle:
Principle #1Segmentation

2Quantity of substance

If capacitor electrodes are placed close to each other, then capacitance increases, but coupling between data lines and gate electrodes increases causing crosstalk

Engineering Contradiction:
ImprovecapacitanceVSAvoidimage quality
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The insulating layer serves as a mediator that enables close placement of capacitor electrodes to increase capacitance while preventing harmful coupling. By positioning the insulating layer between the first and second capacitor electrodes, the design achieves high capacitance without degrading image quality through crosstalk

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances capacitance, reduces crosstalk, and improves image quality by optimizing the coupling between data lines and gate electrodes, leading to better performance in organic light-emitting display devices.

Implementation Method 1

a first capacitor electrode, a second capacitor electrode, and an insulating layer between the first capacitor electrode and the second capacitor electrode

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

a capacitor between a gate electrode of the driving transistor and the first data line

Methodology Applied
Scientific EffectElectrostatic field: Electric Field

Data Source

PatentEP4486094A1Display device
Publication Date: 2025.01.01 SAMSUNG DISPLAY CO LTD
  • EP4486094A1 patent drawingFigure 1
  • EP4486094A1 patent drawingFigure 2
  • EP4486094A1 patent drawingFigure 3

AI summary

The present disclosure relates to a display device capable of increasing the capacitance of a capacitor and improving image quality. The display device may include a first data line, a first pixel connected to the first data line, and including a driving transistor, and a first capacitor between a gate electrode of the driving transistor and the first data line.