OLED Pixel Circuit Insulating Layers for Oxide TFT Stability
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Solution Overview
Problem
The stability of oxide semiconductor transistors in OLED display panels is compromised due to hydrogen sensitivity and defects in insulating layers, affecting the performance of driver and pixel circuits.
Innovation Solution
A display panel design with a first transistor containing silicon and a second transistor containing an oxide semiconductor, where the first insulating layer has a higher hydrogen concentration than the second insulating layer, preventing hydrogen diffusion and enhancing transistor stability by repairing defects in the insulating layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If oxide semiconductor transistors are used in the driver circuit to reduce leakage current, then the leakage current is reduced, but the stability of the transistor deteriorates due to hydrogen sensitivity and defects in insulating layers
Solution Approach 1:
The patent applies local quality by creating different hydrogen concentration zones in different insulating layers. The first insulating layer has a higher hydrogen concentration to repair defects, while the second insulating layer has a lower hydrogen concentration to protect the oxide semiconductor active layer from hydrogen diffusion, thus locally optimizing each layer's function to simultaneously reduce leakage and improve stability
Solution Approach 2:
The first insulating layer acts as an intermediary between the base substrate and the second insulating layer. It serves as a hydrogen source to repair defects in the second insulating layer, while the second insulating layer acts as a protective barrier preventing hydrogen from reaching the oxide semiconductor active layer. This intermediary structure resolves the contradiction by mediating hydrogen distribution
2Manufacturing precision
If hydrogen concentration in insulating layers is increased to repair defects, then the defects in insulating layers are reduced, but hydrogen diffusion to oxide semiconductor transistors increases, affecting their stability
Solution Approach 1:
The patent segments the insulating layer structure into two distinct layers with different hydrogen concentrations. The first insulating layer is segmented to have high hydrogen content for defect repair, while the second insulating layer is segmented to have low hydrogen content for protection. This segmentation allows each layer to perform its specific function without compromising the other
Solution Approach 2:
Different local regions (insulating layers) are given different hydrogen concentrations according to their specific functions. The first insulating layer locally provides high hydrogen concentration for defect repair, while the second insulating layer locally maintains low hydrogen concentration to prevent hydrogen damage to the transistor, resolving the contradiction between defect repair and hydrogen protection
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the stability and performance of the driver circuit and pixel circuit, ensuring reliable operation of OLED display panels by minimizing the impact of hydrogen on the oxide semiconductor transistors.
Implementation Method 1
The concentration of hydrogen in the first insulating layer is higher than the concentration of hydrogen in the second insulating layer
Implementation Method 2
The concentration of hydrogen in the first insulating layer is higher than the concentration of hydrogen in the second insulating layer, preventing hydrogen diffusion
Data Source
AI summary
Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor and a second transistor, where the first transistor and the second transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain; and a first insulating layer and a second insulating layer, where the first insulating layer is located on a side of the second active layer facing away from the base substrate and between the second gate and the second active layer, the second insulating layer is located on a side of the second active layer facing towards the base substrate.