OLED Pixel Circuit Doping Layout for High-PPI Reliability
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Solution Overview
Problem
Existing silicon-based OLED display devices face challenges in achieving high PPI (Pixels Per Inch) and efficient layout design to reduce the display area, while also ensuring reliability under high voltage conditions.
Innovation Solution
The display device incorporates a pixel circuit with transistors having specific doping concentration gradients and orientations, allowing for compact layout and reduced layout area, along with a manufacturing method that adjusts doping concentrations to manage driving currents effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the display area is reduced to achieve higher PPI, then the resolution is improved, but the layout design becomes more difficult and transistor breakdown risk increases under high voltage
Solution Approach 1:
The patent applies different doping concentrations to different regions of the transistor. Specifically, the first doping concentration in the first active region is higher than the second doping concentration in the second active region, creating local quality variations that optimize both compact layout and high voltage reliability simultaneously
Solution Approach 2:
The patent changes the doping concentration parameter across different transistor regions. By varying the doping concentration from the first active region to the second active region, the patent achieves optimized electrical characteristics that enable compact layouts while maintaining reliability under high voltage conditions
2Speed
If the doping concentration is increased to improve transistor switching performance, then the switching speed is improved, but the risk of breakdown under high voltage increases
Solution Approach 1:
The patent implements local quality by assigning different doping concentrations to different active regions. The first active region has a higher doping concentration for fast switching, while the second active region has a lower doping concentration for high voltage reliability, resolving the contradiction between speed and breakdown resistance
3Measurement precision
If the transistor size is reduced to increase pixel density, then the PPI is improved, but the manufacturing precision requirements become more stringent
Solution Approach 1:
The patent uses local quality variations in doping concentration to compensate for manufacturing challenges. By carefully controlling doping in different regions, the patent achieves reliable transistor performance in compact pixel structures, effectively managing the trade-off between pixel density and manufacturing precision
Data Source
AI summary
A display device and a manufacturing method thereof are disclosed. The display device includes a base substrate and at least one pixel circuit provided on the base substrate, and the pixel circuit includes a driving transistor, a first transistor, and a second transistor; the driving transistor includes a control electrode, a first electrode, and a second electrode; the first transistor includes a first active region, the second transistor includes a second active region, the driving transistor includes a fourth active region, at least one of a doping concentration of the first active region and a doping concentration of the second active region is greater than a doping concentration of the fourth active region.