OLED Pixel Circuit With N-Channel TFTs for Gate Potential Stability

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing organic EL display devices with p-channel transistors experience high driving power consumption and flicker issues due to large source-drain leakage and changes in gate potential during light emission.

Innovation Solution

The display device incorporates a pixel circuit with n-channel transistors, including a correction transistor, a switching transistor, and an initialization transistor, coupled with a capacitive element to reduce leakage current and stabilize gate potential, thereby reducing driving power and flickering.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If p-channel transistors are used in the pixel circuit, then the device can be manufactured with standard processes, but the source-drain leakage current is large causing gate potential changes and flicker

Engineering Contradiction:
Improvetransistor fabricationVSAvoidgate potential stability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the transistor type parameter from p-channel to n-channel to fundamentally alter the electrical characteristics. This parameter change reduces source-drain leakage current by approximately one order of magnitude compared to p-channel transistors, thereby stabilizing the gate potential during light emission and eliminating flicker while maintaining compatibility with standard manufacturing processes

Inventive Principle:
Principle #35Parameter changes

2Device complexity

If p-channel transistors are used in the pixel circuit, then the device structure is simplified, but the driving power consumption increases due to large leakage current

Engineering Contradiction:
Improvepixel circuit structureVSAvoiddriving power consumption
Core Design Contradiction:
Device complexityVSUse of energy by moving object

Solution Approach 1:

The patent changes the transistor type parameter from p-channel to n-channel, which reduces the leakage current by approximately one order of magnitude. This parameter change directly reduces the driving power consumption while maintaining the same pixel circuit structure and manufacturing process complexity

Inventive Principle:
Principle #35Parameter changes

3Adaptability or versatility

If p-channel transistors are used in the pixel circuit, then the device can operate with standard voltage levels, but the amplitude of driving lines becomes large increasing power consumption

Engineering Contradiction:
Improvevoltage level compatibilityVSAvoiddriving line power
Core Design Contradiction:
Adaptability or versatilityVSPower

Solution Approach 1:

The patent changes the transistor type parameter from p-channel to n-channel, which reduces the required driving line amplitude. This parameter change reduces the driving power consumption while maintaining compatibility with standard voltage levels through appropriate voltage level design

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration minimizes leakage current, stabilizes gate potential, and enhances image quality by reducing flickers and uneven luminance, achieving low power consumption and improved image clarity.

Implementation Method 1

An organic electroluminescence (EL) element utilizing a phenomenon of emitting light in response to applying of an electric field to an organic thin film

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS12482421B2Display device having driving transistor to drive electro-optical element
Publication Date: 2025.11.25 CANON KK
  • US12482421B2 patent drawing
  • US12482421B2 patent drawing
  • US12482421B2 patent drawing

AI summary

A display device includes a current-driven electro-optical element, a first supply, a second supply, a driving transistor, a correction transistor, an anode switching transistor, an initialization transistor, and a capacitive element. A current is supplied from the first supply. The second supply is lower in potential than the first supply. The driving transistor is configured to drive the electro-optical element in accordance with a written image signal. The correction transistor is coupled between a gate of the driving transistor and a second terminal of the driving transistor. The anode switching transistor is coupled between the second terminal of the driving transistor and an anode of the electro-optical element. The initialization transistor is coupled between the anode of the electro-optical element and the second supply. The capacitive element is coupled to the gate of the driving transistor. The correction, anode switching, and initialization transistors are n-channel transistors.