OLED Sensing Circuit Leakage Current Isolation

The patent extracts and removes the leakage current from the sensing path by introducing a separate leakage current path through the current receiving unit. The leakage current is diverted through a dedicated route that includes a leakage current sensing transistor, allowing it to be measured and compensated separately from the pixel current, thereby eliminating its contaminating effect on the pixel current sensing accuracy.

The patent introduces an intermediary leakage current sensing transistor and dedicated leakage current path that acts as a mediator between the input terminal and the sensing circuit. This intermediary structure allows the leakage current to be separately identified, measured, and compensated without directly interfering with the pixel current sensing process, thus maintaining high sensing accuracy.

The patent implements a universal sensing circuit that can handle both positive and negative bias voltage ranges through a single integrated structure. The current receiving unit and sensing circuit are designed with multi-functionality to accommodate different bias voltage polarities by selectively activating appropriate transistors and adjusting current flow directions, eliminating the need for separate sensing circuits for each voltage range and thereby reducing the overall circuit area.

The patent employs dynamic switching mechanisms that allow the sensing circuit to adapt its configuration based on the bias voltage range. By dynamically controlling the activation of different transistor paths and adjusting the sensing direction, the circuit maintains versatility across wide bias voltage ranges while using a compact, unified structure rather than multiple static circuits.