OLED Shielding Electrode Suppresses Vertical Crosstalk

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Solution Overview

Problem

In organic light emitting diode (OLED) displays, parasitic capacitors formed between thin film transistors and adjacent signal lines cause vertical crosstalk, degrading display quality and reliability due to changes in gate voltage from adjacent data voltage, especially in high-resolution displays with closely packed elements.

Innovation Solution

The implementation of shielding electrodes above and below the gate electrode of the driving thin film transistor, with insulating layers in between, to form capacitors with higher capacitance than parasitic capacitors, effectively shielding the gate voltage from adjacent signal line voltage changes, thereby suppressing pixel voltage discharge and maintaining data integrity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If pixel size is reduced to achieve high resolution, then display resolution is improved, but parasitic capacitance between adjacent elements increases causing vertical crosstalk

Engineering Contradiction:
Improvedisplay resolutionVSAvoidvertical crosstalk
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

A shielding electrode is introduced as an intermediary element positioned between the data line and the gate electrode of the driving transistor. This shielding electrode acts as a mediator that blocks the electric field coupling between the data line and gate electrode, thereby eliminating the parasitic capacitance effect and preventing vertical crosstalk while maintaining high resolution display capabilities

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If elements are arranged closer together to reduce pixel size, then productivity is improved, but interference between adjacent signal lines increases

Engineering Contradiction:
Improvepixel integration densityVSAvoidsignal line interference
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The shielding electrode serves as a physical barrier positioned between adjacent signal lines (data line and gate electrode), preventing direct electric field interference. This intermediary structure enables closer spacing of pixels and higher integration density while maintaining signal integrity and minimizing crosstalk between adjacent elements

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution minimizes the impact of adjacent signal line voltage changes on the gate voltage of the driving thin film transistor, reducing vertical crosstalk and enhancing display quality and reliability, especially in high-resolution OLED displays with smaller pixel sizes.

Implementation Method 1

A shielding electrode is positioned between a data line and a gate electrode of a driving transistor to shield an electric field formed between the data line and the gate electrode

Methodology Applied
Scientific EffectElectric field shielding: Electric Field

Implementation Method 2

A parasitic capacitor is formed between the driving thin film transistor's gate electrode and a line adjacent to it, for example, a data line to which a data voltage is applied

Methodology Applied
Scientific EffectParasitic capacitance: Capacitance

Data Source

PatentEP3174099B1Organic light emitting diode display
Publication Date: 2022.08.10 LG DISPLAY CO LTD
  • EP3174099B1 patent drawingFigure 1
  • EP3174099B1 patent drawingFigure 2
  • EP3174099B1 patent drawingFigure 3

AI summary

An organic light emitting display in which each pixel has a driving thin film transistor for adjusting the current flowing through an organic light emitting diode based on a voltage applied to a gate electrode, includes the gate electrode of the driving thin film transistor; a signal line adjacent to the gate electrode of the driving thin film transistor; and a first shielding electrode located above the gate electrode of the driving thin film transistor, with a first insulating layer therebetween, wherein the first shielding electrode protrudes further towards the signal line than the gate electrode of the driving thin film transistor.