OLED Storage Capacitor via Oxide Semiconductor Edge Conductivity
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Solution Overview
Problem
In high-resolution OLED display devices, the reduction in pixel size leads to decreased storage capacitance, which in turn reduces the aperture ratio, making it challenging to maintain the voltage level for the emitting diode across frames.
Innovation Solution
The implementation of a first and second storage electrode configuration using a conductive edge portion of the oxide semiconductor layer, combined with an insulating layer, forms a storage capacitor that maximizes storage capacitance without decreasing the aperture ratio, achieved through a plasma process that deoxidizes specific regions of the oxide semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the size of pixel region is decreased to produce high resolution display device, then the resolution is improved, but the storage capacitance is decreased
Solution Approach 1:
The gate electrode and storage electrode are merged into a single continuous electrode structure. The gate electrode extends in the first direction to control the channel, while simultaneously serving as one electrode of the storage capacitor. This integration allows the storage capacitor to be formed using the same electrode without requiring separate structures, thereby increasing storage capacitance within the reduced pixel area while maintaining high resolution.
2Quantity of substance
If the size of storage capacitor is increased to provide high storage capacitance, then the storage capacitance is improved, but the aperture ratio is reduced
Solution Approach 1:
The gate electrode and storage electrode are merged into a single continuous electrode structure. The gate electrode extends in the first direction to control the channel, while simultaneously serving as one electrode of the storage capacitor. This integration allows the storage capacitor to be formed using the same electrode without requiring separate structures, thereby increasing storage capacitance within the reduced pixel area while maintaining high resolution.
Solution Approach 2:
The gate electrode performs dual functions: it controls the channel current flow in the transistor and simultaneously serves as one electrode of the storage capacitor. This multi-functionality eliminates the need for dedicated storage capacitor electrodes, maximizing the use of available space and maintaining aperture ratio while providing sufficient storage capacitance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the storage capacitance of the OLED display device, maintaining the voltage level for the emitting diode across frames while preserving the aperture ratio, thus improving the display's resolution and brightness consistency.
Implementation Method 1
a portion of the second region at an edge of the first storage electrode except a center of the first storage electrode is conductive to form a second storage electrode
Implementation Method 2
a portion of the second region at an edge of the first storage electrode except a center of the first storage electrode is conductive to form a second storage electrode
Implementation Method 3
the first and second storage electrodes and the first insulating layer constitute a first storage capacitor
Data Source
AI summary
An OLED display device includes a first oxide semiconductor layer including first to fourth regions; a first gate electrode on a first insulating layer and the first oxide semiconductor layer, and completely overlapping the first region; a first storage electrode extending from the first gate electrode and overlapping the second region; a second insulating layer covering the first gate electrode and the first storage electrode and exposing the third and fourth regions; first source and drain electrodes on the second insulating layer and contacting the third and fourth regions; and an emitting diode connected to the first drain electrode, wherein a portion of the second region at an edge of the first storage electrode except a center of the first storage electrode is conductive to form a second storage electrode, and the first and second storage electrodes and the first insulating layer constitute a first storage capacitor.