OLED Driving Substrate Structure for Narrow-Frame GOA Current
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Solution Overview
Problem
The existing gate driver on array (GOA) technology for OLED displays faces challenges in reducing the size of the driving substrate, which limits the size of the gate driving circuit and the frame, due to the need for larger thin film transistors to handle high current, thereby hindering the achievement of a narrow frame design.
Innovation Solution
A driving substrate with a unique structure comprising thin film transistor structures in both display and non-display areas, where the first light shielding layer is multiplexed into a second gate electrode and electrically connected, and the second light shielding layer is connected to the second source electrode, forming conductive channels and parasitic capacitances to enhance carrier mobility and suppress threshold voltage drift, allowing for a narrow frame design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If conventional device structure is used to increase current in GOA region, then current capability is improved, but TFT size increases which limits narrow frame design
Solution Approach 1:
The patent changes the material parameter of the active layer from conventional semiconductor to oxide semiconductor, which fundamentally alters the carrier mobility parameter. This material substitution enables high current capability with smaller TFT dimensions, directly resolving the contradiction between current capability and TFT size.
Solution Approach 2:
The patent employs a composite structure combining oxide semiconductor active layer with specific gate insulating layer and light shielding layer configurations. This composite approach optimizes both electrical performance for high current and spatial efficiency for reduced TFT size, enabling narrow frame design.
2Area of moving object
If TFT size is reduced for narrow frame design, then frame size is reduced, but current capability decreases
Solution Approach 1:
By changing the active layer material to oxide semiconductor, the patent achieves high carrier mobility that compensates for reduced TFT size. This parameter change allows small TFTs to deliver high current, simultaneously achieving narrow frame design and maintaining current capability.
3Stability of the object's composition
If light shielding layer is added to protect active layer, then stability is improved, but device complexity increases
Solution Approach 1:
The patent merges the light shielding layer with the gate electrode structure, making the light shielding layer serve dual functions: protecting the oxide semiconductor active layer from light exposure and acting as the gate electrode. This integration improves stability while avoiding additional structural complexity.
Solution Approach 2:
The gate electrode is designed to simultaneously function as a light shielding layer, providing both electrical control and optical protection. This multi-functionality approach maintains device simplicity while ensuring active layer stability through light shielding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases on-state current, suppresses negative threshold voltage drift, and improves carrier mobility, facilitating a narrow frame design while maintaining stability and electrical properties of the active layers.
Implementation Method 1
the second light shielding layer and the second active layer have overlapping regions, and parasitic capacitances are formed between the second light shielding layer, the second active layer, and the third gate electrode, respectively
Implementation Method 2
the first via hole penetrates the gate insulating layer and the buffer layer... the first source electrode and the first drain electrode are electrically connected to the first active layer through the second via hole and the third via hole
Data Source
AI summary
A driving substrate, a manufacturing method thereof, and a display panel are disclosed. The driving substrate includes a display area and a non-display area. The driving substrate includes a substrate, a first thin film transistor structure, and a second thin film transistor structure. The first thin film transistor structure is disposed on the substrate and corresponds to the non-display area. The first thin film transistor structure includes a first light shielding layer, a first active layer, and a first gate electrode. The first light shielding layer is multiplexed into the second gate. The first light shielding layer is electrically connected to the first gate electrode.