OLED TFT Array Panel Diffusion Barrier Alignment
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Solution Overview
Problem
The performance of thin film transistors in organic light emitting diode displays deteriorates due to misalignment and protrusion of diffusion barrier layers, leading to reduced current flow and transistor efficiency.
Innovation Solution
The implementation of a second diffusion barrier layer made of metal oxide, which contacts the lateral surface of the first diffusion barrier layer and aligns with the first gate electrode, preventing protrusion and ensuring proper alignment, thereby maintaining transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a single diffusion barrier layer is used, then the structure is simple, but misalignment and protrusion occur leading to performance deterioration
Solution Approach 1:
The single diffusion barrier layer is segmented into two distinct layers: a first diffusion barrier layer (metal) and a second diffusion barrier layer (metal oxide). This segmentation allows each layer to perform its function optimally - the first layer provides diffusion barrier properties while the second layer ensures proper alignment with the gate electrode, thereby resolving the misalignment issue without excessive complexity
Solution Approach 2:
The second diffusion barrier layer acts as an intermediary between the first diffusion barrier layer and the gate electrode. It mediates the alignment relationship, ensuring that the diffusion barrier structure properly aligns with the gate electrode while the first layer maintains its diffusion barrier function
2Area of stationary object
If the diffusion barrier layer protrudes beyond the gate electrode, then coverage is improved, but edge current increases and performance deteriorates
Solution Approach 1:
Different regions of the diffusion barrier structure are given different qualities through the two-layer design. The first diffusion barrier layer extends broader coverage to ensure complete protection, while the second diffusion barrier layer is configured to align precisely with the gate electrode edges, preventing edge current. This local differentiation of quality allows both coverage and performance requirements to be satisfied
Data Source
AI summary
An exemplary embodiment of the present invention provides a thin film transistor array panel and an organic light emitting diode display including the same including a substrate, a semiconductor disposed on the substrate, a first gate insulation layer disposed on the semiconductor, and a first diffusion barrier layer disposed on the first gate insulation layer. A second diffusion barrier layer is disposed on a lateral surface of the first diffusion barrier layer. A first gate electrode is disposed on the first diffusion barrier layer. A source electrode and a drain electrode are connected to the semiconductor. The first diffusion barrier layer comprises a metal, and the second diffusion barrier layer comprises a metal oxide including the metal.