OLED Driving Transistor Contact Hole Reduction via Electrode Merging

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional active matrix organic light emitting diode devices have a reduced design area for driving transistors due to the presence of multiple transistors per pixel, leading to increased current stress and shortened transistor lifespan, which in turn shortens the device's lifespan.

Innovation Solution

The solution involves reducing the number of contact holes to minimize the area occupied by them, allowing for a larger design margin for the driving transistor by electrically connecting the gate electrode of a first transistor to the source electrode of a second transistor through a single contact hole, thereby reducing current stress on the driving transistor.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If multiple transistors are disposed per pixel in conventional active matrix OLED devices, then the device can achieve active matrix driving capability, but the design area of the driving transistor is reduced and current stress increases

Engineering Contradiction:
Improvetransistor lifespanVSAvoiddesign area of driving transistor
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent merges the gate electrode of the first transistor and the source electrode of the second transistor into a single integrated electrode structure. This merging eliminates the need for separate contact holes for each electrode, reducing the total area occupied by contact holes and thereby expanding the design area of the driving transistor while maintaining active matrix driving capability.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The integrated electrode structure serves multiple functions simultaneously: it acts as both the gate electrode for the first transistor and the source electrode for the second transistor. This multi-functionality reduces the number of separate components needed, minimizing contact hole area and improving transistor reliability through reduced current stress.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If multiple contact holes are used to connect transistors, then electrical connections can be established, but the area occupied by contact holes increases

Engineering Contradiction:
Improvedevice lifespanVSAvoidarea occupied by contact holes
Core Design Contradiction:
ReliabilityVSArea of moving object

Solution Approach 1:

The patent combines multiple contact holes into a single contact hole by merging the gate electrode and source electrode structures. This merging reduces the total area occupied by contact holes from multiple separate openings to one consolidated opening, thereby increasing the design area available for the driving transistor and improving overall device reliability.

Inventive Principle:
Principle #5Merging (Combining)

3Reliability

If multiple contact holes are used for transistor interconnection, then electrical connectivity is achieved, but current stress on the driving transistor increases

Engineering Contradiction:
Improvetransistor lifespanVSAvoidcurrent stress
Core Design Contradiction:
ReliabilityVSStress or pressure

Solution Approach 1:

The patent merges the gate electrode of the first transistor with the source electrode of the second transistor into a single integrated structure. This merging reduces the number of contact holes from multiple to one, thereby reducing the total contact resistance and current stress on the driving transistor, which extends transistor lifespan and improves reliability.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS8564194B2Organic light emitting diode device and method for fabricating the same
Publication Date: 2013.10.22 LG DISPLAY CO LTD
  • US8564194B2 patent drawing
  • US8564194B2 patent drawing
  • US8564194B2 patent drawing

AI summary

An organic light emitting diode device includes a gate electrode of a first transistor on a substrate; a gate insulation film on the gate electrode of the first transistor; a source electrode of a second transistor on the gate insulation film and overlapping with the gate electrode of the first transistor; a contact hole exposing the gate electrode of the first transistor and the source electrode of the second transistor; a conductive wiring in the contact hole, for electrically connecting the gate electrode of the first transistor and the source electrode of the second transistor.