OLED Driving Transistor Gate Insulator Permittivity Control
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Solution Overview
Problem
Current organic light emitting diodes (OLEDD) displays experience current scattering issues in mass production due to capacitance scattering associated with the two gate insulating layers in the OLED driving thin film transistor configuration.
Innovation Solution
The implementation of a second gate insulating layer with a permittivity of 10 to 100, made from materials like zirconium oxide, hafnium oxide, or aluminum oxide, is introduced to reduce current scattering by broadening the physical and electric field intervals between the driving gate electrode and semiconductor layer, thereby minimizing capacitance value scattering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If two gate insulating layers are positioned between the driving gate electrode and the driving semiconductor layer to broaden the voltage handling range, then the driving range of gate voltages is improved, but current scattering occurs due to capacitance scattering associated with the two gate insulating layers
Solution Approach 1:
The patent changes the physical parameters of the second gate insulating layer, specifically setting its permittivity to a high value (10-100) and controlling its thickness (100-1000 Å), to reduce capacitance scattering while maintaining broad voltage handling capability
Solution Approach 2:
The patent employs composite gate insulating layer structure with specific materials (zirconium oxide, zirconium oxide doped with metal, hafnium oxide, hafnium oxide doped with metal, titanium oxide, titanium oxide doped with metal, aluminum oxide, or aluminum oxide doped with metal) to achieve both broad voltage range and reduced current scattering
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces current scattering in the driving thin film transistor, enhancing the stability and accuracy of the OLED display by controlling the gate voltage range and improving display quality.
Implementation Method 1
current scattering (mass production current deviation) of the driving thin film transistor may occur due to capacitance scattering associated with the two gate insulating layers
Implementation Method 2
permittivity of the second gate insulating layer is about 10 to about 100
Data Source
AI summary
An organic light emitting diodes display includes: a switching thin film transistor and a driving thin film transistor connected to the switching thin film transistor, wherein the driving thin film transistor includes a driving semiconductor layer section, a first gate insulating layer covering the driving semiconductor layer section, a floating gate electrode disposed on the first gate insulating layer, a second gate insulating layer covering the floating gate electrode, and a driving gate electrode disposed on the second gate insulating layer and at a position corresponding to the floating gate electrode, wherein the second gate insulating layer has a permittivity in the range of about 10 to about 100.