OLED Display Transistor Gate Insulator Thickness Optimization
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Solution Overview
Problem
Conventional OLED display devices using polysilicon transistors have complex structures leading to low yield and extended manufacturing time, while amorphous silicon transistors suffer from poor electron mobility, limiting luminescence and requiring larger transistors to increase current, which reduces the display area.
Innovation Solution
The OLED display device employs a first transistor with a thicker gate insulating layer and a second transistor with a thinner gate insulating layer, allowing for increased driving current without reducing the display area, by optimizing the thickness of the gate insulating layers to balance reliability and luminescence.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If polysilicon transistors are used in OLED display devices, then electrical performance is improved, but device complexity increases and manufacturing yield decreases
Solution Approach 1:
The patent applies local quality by using different gate insulating layer thicknesses for different transistor types within the same display device. Specifically, switching transistors use a first gate insulating layer thickness while driving transistors use a second gate insulating layer thickness, allowing each transistor type to be optimized for its specific function while maintaining overall device simplicity
Solution Approach 2:
The patent changes the physical parameter of gate insulating layer thickness to optimize transistor performance. By adjusting the thickness parameter differently for switching and driving transistors, the patent achieves superior electrical characteristics without requiring complex polysilicon structures, thereby simplifying the overall device architecture
2Device complexity
If amorphous silicon transistors are used to simplify structure, then device complexity is reduced, but electron mobility decreases and luminescence is limited
Solution Approach 1:
The patent applies local quality by optimizing gate insulating layer thickness for each transistor type. Switching transistors use a first thickness value while driving transistors use a second thickness value, allowing local optimization of electron mobility and luminescence control without requiring complex polysilicon structures throughout the entire device
Solution Approach 2:
The patent changes the gate insulating layer thickness parameter to enhance electron mobility in amorphous silicon transistors. By carefully selecting different thickness values for different transistor locations, the patent achieves improved electrical performance while maintaining the simplicity of amorphous silicon fabrication
3Reliability
If transistor size is increased to improve current driving capability, then luminescence increases, but display area decreases
Solution Approach 1:
The patent changes the gate insulating layer thickness parameter to improve current driving capability without increasing transistor size. By optimizing the thickness for driving transistors, the patent achieves enhanced luminescence control while maintaining compact transistor dimensions, thereby preserving maximum display area
Data Source
AI summary
An organic light emitting diode (OLED) display device and a manufacturing method thereof to improve a luminous character are provided. The OLED display device includes a first transistor, a second transistor and an OLED. An image is displayed by applying a driving current to OLED through the first transistor and the second transistor. The thickness of the gate insulating layers of the first and the second transistor are different. The OLED is provided with the sufficient driving current to improve the luminous character without decreasing emissive area.