OLED Driving Transistor Insulation Segmentation for Gate Voltage Range

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Solution Overview

Problem

The existing OLED displays face challenges in widening the driving range of gate voltage due to difficulties in forming a thick insulation layer between the active layer and the gate electrode of the driving thin film transistor, which hinders smooth impurity doping and increases the doping accelerating voltage.

Innovation Solution

The OLED display incorporates a thick insulation layer between the active layer and the gate electrode of the driving thin film transistor, along with a second insulation layer of the same width as the gate electrode, to increase the driving range of the gate voltage, while ensuring smooth impurity doping by covering the source and drain regions with a thin insulation layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a thick insulation layer is formed between the active layer and the gate electrode of the driving thin film transistor, then the driving range of the gate voltage is widened, but the impurity doping becomes less smooth and the doping accelerating voltage increases

Engineering Contradiction:
Improvedriving range of gate voltageVSAvoidsmoothness of impurity doping
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The insulation layer is divided into two segments: a first insulation layer with smaller thickness for smooth impurity doping, and a second insulation layer with larger thickness for widening the gate voltage driving range. This segmentation allows each layer to fulfill its specific function without compromising the other.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the insulation structure have different thicknesses optimized for different purposes. The first insulation layer region provides smooth doping characteristics, while the second insulation layer region provides sufficient voltage driving range, creating local quality variations to resolve the contradiction.

Inventive Principle:
Principle #3Local quality

2Adaptability or versatility

If a thick insulation layer is formed between the active layer and the gate electrode, then the driving range of gate voltage is increased, but the doping process requires higher accelerating voltage

Engineering Contradiction:
Improvedriving range of gate voltageVSAvoiddoping accelerating voltage
Core Design Contradiction:
Adaptability or versatilityVSUse of energy by moving object

Solution Approach 1:

The insulation structure is segmented into two layers with different thicknesses. The first insulation layer maintains lower doping resistance for efficient doping, while the second insulation layer provides the necessary voltage isolation for wide driving range, avoiding the need for high accelerating voltage.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The insulation structure exhibits local quality variation where the first insulation layer region optimizes for low-energy doping processes, while the second insulation layer region optimizes for voltage driving range, thereby reducing the required doping accelerating voltage.

Inventive Principle:
Principle #3Local quality

3Adaptability or versatility

If a thick insulation layer is formed between the active layer and the gate electrode, then the gate voltage control range is improved, but the manufacturing process complexity increases

Engineering Contradiction:
Improvegate voltage control rangeVSAvoidinsulation layer structure
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The insulation layer is segmented into two distinct layers formed through sequential deposition and patterning processes. This segmentation enables independent optimization of each layer's thickness for its specific function while maintaining a relatively simple overall manufacturing flow.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The dual-layer insulation structure implements local quality differentiation where each layer's thickness is locally optimized for its specific function, achieving complex performance requirements through a systematic yet manageable manufacturing process.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enhances the driving range of the gate voltage, allowing precise control of grayscale and improving display resolution, while simplifying the manufacturing process by reducing the need for increased doping accelerating voltage.

Implementation Method 1

Holes injected from one electrode and electrons injected from the other electrode are combined in the organic layer to form excitons, and the excitons generate energy, thereby emitting light

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Implementation Method 2

source region and drain region doped with an impurity

Methodology Applied
Scientific EffectIon Implantation: Ion Implantation

Data Source

PatentUS8779416B2Organic light emitting diode display
Publication Date: 2014.07.15 SAMSUNG DISPLAY CO LTD
  • US8779416B2 patent drawing
  • US8779416B2 patent drawing
  • US8779416B2 patent drawing

AI summary

An organic light emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes: i) gate wires positioned on a substrate in a first direction, ii) data wires positioned on the gate wires in a second direction crossing the first direction, iii) a pixel circuit including first thin film transistors respectively connected to the gate wires and the data wires and iii) an OLED connected to the pixel circuit. The first thin film transistor may also include a first active layer interconnecting the data wires and the OLED and including a channel region and source and drain regions doped with an impurity, and a first gate electrode positioned over the first active layer with first and second insulation layers sequentially interposed therebetween, wherein the second insulation layer is positioned on the channel region.