OLED Display Transistor Structure with Oxide and Polysilicon Layers
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Solution Overview
Problem
Current OLED displays face limitations in performance and manufacturing complexity due to the use of single semiconductor materials, lacking the enhanced characteristics that could be achieved by combining oxide and polycrystalline silicon semiconductor layers.
Innovation Solution
The integration of an oxide semiconductor layer and a polycrystalline silicon semiconductor layer in OLED displays, with specific transistor structures and manufacturing methods that allow for efficient formation of both oxide thin film transistors and polycrystalline silicon thin film transistors on the same substrate, simplifying the manufacturing process while enhancing performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single semiconductor material is used in OLED displays, then the manufacturing process is simpler, but the performance characteristics are limited
Solution Approach 1:
The patent combines oxide semiconductor layer and polycrystalline silicon semiconductor layer in a single OLED display structure. The oxide semiconductor layer provides high uniformity and electron mobility, while the polycrystalline silicon layer provides reliability. These two different semiconductor materials are merged to work together in the same device, resolving the contradiction between performance enhancement and structural complexity.
Solution Approach 2:
The patent employs composite semiconductor structure by integrating oxide semiconductor and polycrystalline silicon materials. This composite approach allows the device to utilize the complementary advantages of both materials - the high electron mobility and uniformity of oxide semiconductors combined with the reliability of polycrystalline silicon, thereby improving overall performance characteristics.
2Speed
If oxide semiconductor layer is used to improve electron mobility, then the manufacturing complexity increases
Solution Approach 1:
The patent merges the oxide semiconductor layer with polycrystalline silicon semiconductor layer in a unified structure. By combining these materials, the patent achieves high electron mobility from the oxide semiconductor while maintaining manufacturing feasibility through the integration with polycrystalline silicon, which has established manufacturing processes.
3Reliability
If polycrystalline silicon is used for reliability, then the electron mobility decreases
Solution Approach 1:
The patent combines polycrystalline silicon semiconductor layer with oxide semiconductor layer. The polycrystalline silicon provides the reliability foundation, while the oxide semiconductor layer contributes high electron mobility. This merging allows the device to achieve both reliability and high-speed performance simultaneously.
Solution Approach 2:
The patent uses composite semiconductor structure integrating polycrystalline silicon and oxide semiconductor materials. This composite approach allows the device to utilize the complementary advantages of both materials - the reliability of polycrystalline silicon combined with the high electron mobility of oxide semiconductors, thereby achieving both goals simultaneously.
Data Source
AI summary
A display and a method of manufacturing the same, the display including a substrate main body, a first thin film transistor on the substrate main body, the first thin film transistor including a first gate electrode, the first gate electrode including polycrystalline silicon, a first semiconductor layer on the first gate electrode, first source electrode, and a first drain electrode, and a second thin film transistor on the substrate main body, the second thin film transistor including a second semiconductor layer, the second semiconductor layer including polycrystalline silicon and being on a same plane as the first gate electrode, a second gate electrode on the second semiconductor layer, a second source electrode, and a second drain electrode.