OLED Transistor Shielding Part for Light-Induced Leakage Currents

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Solution Overview

Problem

Existing OLED display devices face challenges in efficiently initializing and maintaining the voltage of transistors, which can lead to display failures such as luminance changes and color coordinate shifts due to external light interference.

Innovation Solution

The display device incorporates a shielding part that overlaps specific boundaries of transistors to block external light, and a capacitor structure with a driving gate electrode and an extension part of the storage line to maintain voltage differences, ensuring efficient initialization and operation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a shielding part is added to block external light from transistors, then reliability is improved by preventing leakage currents, but device complexity increases due to additional structural components

Engineering Contradiction:
Improvetransistor voltage stabilityVSAvoidtransistor structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The shielding part acts as an intermediary component positioned between external light sources and the transistor boundaries. It selectively blocks harmful light from reaching the transistor channel regions while allowing necessary electrical signals to pass through, thus preventing leakage currents without interfering with the transistor's normal operation.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The shielding part is strategically positioned to overlap only specific boundaries of the transistor (such as the gate electrode boundary) rather than covering the entire transistor structure. This localized approach provides targeted protection against light interference at critical interfaces while minimizing the addition of structural complexity to non-critical areas.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If the shielding part overlaps transistor boundaries to block light, then manufacturing precision is improved by preventing display failures, but ease of manufacture decreases due to alignment requirements

Engineering Contradiction:
Improvetransistor boundary alignmentVSAvoidshielding part positioning
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The shielding part is designed and positioned in advance during the transistor fabrication process, before the transistor becomes fully operational. By pre-positioning the shielding structure to overlap critical boundaries, the design ensures that light blocking is built into the device architecture from the start, preventing display failures due to light interference without requiring post-manufacturing adjustments.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If the capacitor structure is designed with extension parts to maintain voltage differences, then reliability is improved by ensuring efficient initialization, but device complexity increases due to extended capacitor structure

Engineering Contradiction:
Improvevoltage initialization efficiencyVSAvoidcapacitor structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The capacitor structure is divided into functional segments: a main capacitor body for voltage storage and extension parts for voltage maintenance and initialization. The extension parts are positioned to overlap with transistor boundaries, creating distinct functional zones that work together to ensure efficient voltage initialization and maintenance during device operation.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS12324324B2Display device having an emission layer
Publication Date: 2025.06.03 SAMSUNG DISPLAY CO LTD
  • US12324324B2 patent drawing
  • US12324324B2 patent drawing
  • US12324324B2 patent drawing

AI summary

A display device includes signal lines and pixels connected thereto. A first pixel includes a first transistor including a first gate electrode, a first channel region overlapping the first gate electrode, a first source region, and a second drain region facing the first source region, with the first channel region interposed between the first source region and the second drain region. A third transistor includes a third gate electrode, a third channel region overlapping the third gate electrode, a third drain region connected to the first gate electrode, and a third source region facing the third drain region with the third channel region interposed between the third source region and the third drain region. A shielding part overlaps a boundary between the third source region and the third channel region and does not overlap a boundary between the third drain region and the third channel region.