On-Chip Electrical Overstress Detection via Voltage Comparator

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Solution Overview

Problem

Modern integrated circuits (ICs) face challenges in detecting electrical overstress (EOS) events, which can degrade devices without leaving physical evidence, making it difficult to diagnose failures attributed to EOS rather than manufacturing defects.

Innovation Solution

A system within the IC includes a comparator to monitor voltage levels against a predetermined overstress reference voltage, indicating EOS events and storing or outputting this information for real-time monitoring or failure analysis.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional monitoring methods are used, then device operation is maintained, but EOS events cannot be detected or diagnosed

Engineering Contradiction:
ImproveEOS event detection capabilityVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the EOS detection functionality with existing circuit elements by integrating a comparator into the power distribution network. The comparator monitors voltage levels on existing power lines and combines this monitoring function with the power distribution infrastructure, rather than adding completely separate detection circuits.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The comparator circuit serves multiple functions: it monitors voltage levels for EOS detection, provides failure indication through dedicated output pins, and can interface with existing status registers. This multi-functional approach allows a single circuit element to perform detection, indication, and reporting tasks.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If multiple detection systems are added to detect different EOS events, then detection coverage is improved, but device complexity increases

Engineering Contradiction:
Improvedetection coverageVSAvoidnumber of detection systems
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

A single comparator circuit is configured to detect multiple types of EOS events by monitoring voltage thresholds. The same comparator can identify overvoltage conditions, undervoltage conditions, and electrostatic discharge events by comparing against different reference voltage levels, eliminating the need for separate detection circuits for each event type.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The detection system uses parameter changes in voltage thresholds to detect different EOS event types. By adjusting the reference voltage levels and monitoring different voltage conditions, the same hardware circuit can identify various failure modes including overvoltage, undervoltage, and ESD events without requiring additional circuitry.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution allows for the detection and recording of EOS events, providing valuable insights into device failures and enabling real-time monitoring, thus aiding in diagnosing the cause of premature device failure.

Implementation Method 1

a comparator configured to determine whether a monitored voltage level of a monitored signal exceeds an overstress reference voltage level

Methodology Applied
Scientific EffectVoltage comparison:

Data Source

PatentUS9575111B1On chip detection of electrical overstress events
Publication Date: 2017.02.21 XILINX INC
  • US9575111B1 patent drawing
  • US9575111B1 patent drawing
  • US9575111B1 patent drawing

AI summary

A system configured for detecting electrical overstress events within an integrated circuit includes a comparator configured to determine whether a monitored voltage level of a monitored signal exceeds an overstress reference voltage level. The overstress reference voltage level is a predetermined amount of voltage above a nominal voltage level for the monitored signal. The system further includes a write circuit coupled to an output of the comparator. The write circuit is configured to indicate an occurrence of an electrical overstress event within the integrated circuit responsive to the comparator determining that the monitored voltage level exceeds the overstress reference voltage level.