On-Chip Solid-State Supercapacitor With Deep-Trench Electrode Arrays
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Solution Overview
Problem
Existing on-chip supercapacitors using silicon-based nanostructures have limited energy density due to silicon oxidation and the use of single structures, necessitating a novel design to enhance capacitance and energy density.
Innovation Solution
An on-chip all-solid-state supercapacitor design featuring a laminated structure with deep trench and sacrificial layer trenches, increasing electrode area through a laminated structure with a conductive thin film and solid electrolyte, using materials like silicon dioxide and silicon nitride, and a bonding process to form a continuous inner surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single silicon deep trench or nanowire structure is used, then the fabrication process is simple, but the available energy density is relatively small
Solution Approach 1:
The electrode structure is segmented into multiple deep trench structures arranged in an array, with each trench containing conductive material. This segmentation increases the total electrode surface area within the same footprint, thereby increasing energy density while maintaining a relatively simple fabrication process using standard semiconductor manufacturing techniques
Solution Approach 2:
The invention transitions from a single deep trench structure to a three-dimensional array of multiple deep trenches. By utilizing the vertical dimension and arranging trenches in a grid pattern, the total electrode area is significantly increased without proportionally increasing the planar footprint, thus enhancing energy density while keeping the fabrication process manageable
2Ease of manufacture
If silicon-based nanostructures are used to make full use of silicon materials, then material utilization is improved, but silicon oxidation occurs which is irreversible and limits energy density
Solution Approach 1:
A silicon nitride layer is introduced as an intermediary between the silicon substrate and the conductive material (such as tungsten) filling the deep trenches. This silicon nitride layer acts as a diffusion barrier that prevents oxygen from reaching and oxidizing the silicon, thereby maintaining the reliability and performance of the silicon-based structure while allowing full utilization of silicon materials
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design significantly increases electrode area, capacitance density, and energy density, facilitated by a simple etching process and low-cost materials, enhancing energy storage capabilities.
Implementation Method 1
Supercapacitors can store energy through electric double-layer (electric double-layer capacitors)
Implementation Method 2
Supercapacitors can store energy through electric double-layer (electric double-layer capacitors) or near-surface redox reaction (pseudocapacitors)
Implementation Method 3
a passivation layer, such as graphene, carbon, or titanium nitride, is usually coated on the surface of silicon
Implementation Method 4
a passivation layer, such as graphene, carbon, or titanium nitride, is usually coated on the surface of silicon
Data Source
AI summary
An on-chip all-solid-state supercapacitor includes first electrode and second electrode, each including substrate, laminated structure, conductive thin film layer and solid electrolyte. Laminated structure is disposed on surface of substrate and has at least one deep trench structure; inner surface of deep trench structure has sacrificial layer trench to increase electrode area of on-chip all-solid-state supercapacitor capacitance density and energy density; conductive thin film layer covers inner surface of deep trench structure, inner surface of sacrificial layer trench, surface of substrate exposed in deep trench structure and surface of laminated structure facing away from substrate; solid electrolyte is filled inside sacrificial layer trench and deep trench structure covered by conductive thin film layer; solid electrolyte also covers surface of conductive thin film layer facing away from substrate, solid electrolyte of first electrode and solid electrolyte of second electrode are bonded together. A preparation method thereof is also provided.