On-Die Temperature Control for Semiconductor Die Assemblies
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Solution Overview
Problem
Existing semiconductor packaging technologies face challenges in reducing the height of stacked semiconductor dies while maintaining effective bonding, as post-bond annealing processes can degrade electrical characteristics and increase thermal budgets, and bond wires introduce signal delays.
Innovation Solution
The use of localized thermal energy from resistive heating components, such as thermoelectric components, to facilitate conductive component expansion and form metallurgical bonds at lower temperatures or without post-bond annealing, reducing the thermal budget and avoiding adverse effects on integrated circuitry.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If post-bond annealing is used to facilitate conductive component expansion and bonding, then bonding effectiveness is improved, but thermal budget increases and electrical characteristics degrade
Solution Approach 1:
The patent divides the heating function into two distinct components: resistive heating components for localized thermal energy generation and thermoelectric components for temperature control. This segmentation allows independent optimization of bonding effectiveness and thermal budget management, enabling effective bonding at lower overall thermal budgets while protecting sensitive circuitry from excessive heat.
Solution Approach 2:
The patent implements localized thermal energy generation through resistive heating components positioned specifically at bond pads, rather than uniform heating of the entire die. This local quality approach concentrates thermal energy exactly where needed for bonding, improving bonding effectiveness while minimizing the overall thermal budget and protecting other areas of the die from thermal damage.
2Area of stationary object
If stacked semiconductor dies are arranged in shingle stacking or zig-zag pattern to reduce footprint, then area is reduced, but package height increases
Solution Approach 1:
The patent extracts and eliminates bond wires from the interconnect structure by implementing direct bonding between conductive pads on stacked dies. This removal of bond wires reduces package height while maintaining electrical connectivity, allowing compact stacked arrangements like shingle stacking without the height penalty of wire bonds.
Solution Approach 2:
The patent merges the bonding and interconnecting functions into a single direct bond pad-to-pad connection, eliminating the need for separate bond wires. This merging reduces the overall package height by removing intermediate components while maintaining both mechanical bonding and electrical interconnection functions.
3Reliability
If bond wires are used to connect bond pads, then electrical connectivity is achieved, but package height increases and signal propagation delays are introduced
Solution Approach 1:
The patent extracts bond wires from the interconnect structure and replaces them with direct conductive pad bonding. This elimination of bond wires achieves electrical connectivity through a more direct path, reducing package height and minimizing signal propagation delays while maintaining reliable electrical connection.
Solution Approach 2:
The patent replaces the mechanical bond wire system with a direct metallurgical bonding system between conductive pads. This substitution eliminates the need for wire bonding mechanics, reducing package height and improving electrical performance by creating a more direct, lower-inductance connection path.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient bonding of semiconductor dies with reduced height and thermal impact, maintaining electrical performance and minimizing risks associated with thermal budgets, while allowing for more compact and efficient semiconductor packaging.
Implementation Method 1
resistive heating components, such as thermoelectric components, to facilitate conductive component expansion and form metallurgical bonds at lower temperatures
Implementation Method 2
thermoelectric components, such as Peltier devices, that may be used to provide localized temperature control
Data Source
AI summary
On-die temperature control for semiconductor die assemblies, and associated systems and methods are disclosed. In an embodiment, a semiconductor device assembly includes first and second semiconductor dies directly bonded to each other. The semiconductor dies each includes conductive pads and resistive heating components in a dielectric layer, where the resistive heating components are located proximate to the conductive pads to supply localized thermal energy to the conductive pads in response to electric current flowing through the resistive heating components. In some embodiments, the conductive pads of the first semiconductor die are directly bonded to the conductive pads of the second semiconductor die at a first temperature less than a second temperature for the thermal expansion of the conductive pads absent the localized thermal energy generated by the resistive heating components.