On-Die EPM Resistance Chain Layout for Precise Electrical Prediction
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Solution Overview
Problem
Current On-Die Electronic Parameter Monitor (EPM) technologies face challenges in accurately measuring semiconductor chip characteristics, particularly in predicting electrical performance due to variations in resistance patterns and effective resistance distances within semiconductor devices.
Innovation Solution
The semiconductor device incorporates multiple resistance chains with specifically designed upper and lower resistance segments and via plugs, where the effective resistance distances and numbers are standardized to ensure consistent and measurable resistance values, allowing for accurate prediction of electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If diverse test patterns are used to measure transistor characteristics, then measurement coverage is improved, but measurement precision deteriorates due to variations in resistance patterns and effective resistance distances
Solution Approach 1:
The patent applies parameter changes by systematically varying the number of resistance segments (e.g., 1st chain with 10 upper segments, 2nd chain with 5 upper segments, 3rd chain with 2 upper segments) and their corresponding effective resistance distances to create multiple test patterns with different total resistance values. This allows comprehensive electrical characteristic measurement while maintaining precision through controlled parameter diversity.
Solution Approach 2:
The resistance patterns are divided into multiple discrete segments (upper resistance segments and lower resistance segments) connected by via plugs. Each chain consists of segmented resistance elements that can be independently configured, enabling diverse test patterns while maintaining measurement precision through standardized segment definitions and connections.
2Adaptability or versatility
If multiple resistance chains with different configurations are implemented, then electrical characteristic measurement capability is improved, but device complexity increases
Solution Approach 1:
The resistance chains are designed with universal components that serve multiple functions. The via plugs serve both as electrical connectors and as defined resistance elements. The upper and lower resistance segments can be configured in different numbers and arrangements to create multiple test patterns, allowing a single standardized structure to perform diverse measurement functions without increasing inherent complexity.
3Measurement precision
If standardized effective resistance distances are used across resistance chains, then measurement precision is improved, but manufacturing flexibility is reduced
Solution Approach 1:
The patent maintains measurement precision by defining standardized effective resistance distances for via plugs and resistance segments. Simultaneously, it preserves manufacturing flexibility by allowing different numbers of these standardized segments to be configured in each chain (e.g., varying upper segment counts across chains), enabling diverse resistance values to be achieved through combinatorial arrangement rather than custom-designed structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise measurement and prediction of electrical characteristics, improving the design and performance of semiconductor devices by ensuring consistent resistance values across different chains, thereby enhancing the accuracy of on-die EPM.
Implementation Method 1
a first resistance chain including first upper resistance segments, first resistance via plugs, and first lower resistance segments... the first upper resistance segments have a first upper effective resistance distance... the second upper resistance segments have a second upper effective resistance distance, and the third upper resistance segments have a third upper effective resistance distance
Data Source
AI summary
A semiconductor device includes: a first resistance chain including first upper resistance segments, first resistance via plugs, and first lower resistance segments; a second resistance chain including second upper resistance segments, second resistance via plugs, and second lower resistance segments; and a third resistance chain including third upper resistance segments, third resistance via plugs, and third lower resistance segments, wherein the first upper resistance segments have a first upper effective resistance distance, and the second upper resistance segments have a second upper effective resistance distance, and the third upper resistance segments have a third upper effective resistance distance, and the first upper effective resistance distance is equal to the third upper effective resistance distance, and the second upper effective resistance distance is an integer multiple of the first upper effective resistance distance.