Opaque Layer Blocks Light in Oxide Semiconductor TFT
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Solution Overview
Problem
Oxide semiconductor materials used in thin film transistors for displays degrade when exposed to external light, leading to shifts in threshold voltage and reduced display quality.
Innovation Solution
A light-absorbable opaque layer is applied over the channel region of the oxide semiconductor layer to block external light, preventing degradation and maintaining semiconductor characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If oxide semiconductor material is used as the channel layer to achieve high mobility, then the field effect mobility is improved (more than several tens of times greater than amorphous silicon), but the semiconductor characteristics degrade when exposed to external light causing threshold voltage shifts
Solution Approach 1:
An opaque layer is introduced as an intermediary component between the oxide semiconductor channel layer and the external environment. This layer absorbs or blocks external light before it reaches the semiconductor material, preventing photo-induced threshold voltage shifts while allowing the high-mobility oxide semiconductor to function reliably in display devices
2Productivity
If the oxide semiconductor layer is exposed to external light, then the display device can operate, but threshold voltage shifts occur resulting in degradation of display quality
Solution Approach 1:
The harmful effect of external light on the oxide semiconductor is converted into a beneficial solution by introducing an opaque layer that selectively blocks light from reaching the channel region. This allows the display to operate normally while preventing the harmful photo-induced threshold voltage shifts that would otherwise degrade display quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents degradation of semiconductor characteristics due to external light exposure, thereby enhancing the quality and performance of thin film transistors in display devices.
Implementation Method 1
a light-absorbable opaque layer covering the channel region of the oxide semiconductor layer to block external light
Data Source
AI summary
The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT includes an oxide semiconductor layer; a protective layer overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode across the channel region; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.