OPC Any-Angle Edge Filter for Curvilinear Mask 3D Effects
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Solution Overview
Problem
Current optical proximity correction (OPC) methods struggle to effectively correct three-dimensional (3D) effects on curvilinear patterns in semiconductor mask manufacturing, particularly due to computational inefficiencies and inaccuracies in simulating mask topography effects, which can lead to degraded pattern accuracy and increased costs.
Innovation Solution
The implementation of an OPC method that includes extracting edges of a layout on a mask, generating optical images using edge filters, specifically any-angle filters, to correct 3D effects, and creating an OPC model for optimizing mask design data, allowing for efficient simulation and improved pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional OPC methods are used for curvilinear patterns, then the manufacturing process can proceed with standard tools, but the 3D mask effects cannot be effectively corrected leading to degraded pattern accuracy
Solution Approach 1:
The patent changes the parameter of the edge filter from conventional fixed-angle filters to any-angle filters that can operate at arbitrary angles. This parameter change enables accurate correction of curvilinear edges at any orientation, effectively addressing the 3D mask effects that conventional methods cannot handle, thereby improving both pattern accuracy and correction effectiveness
Solution Approach 2:
The patent introduces a new dimensional capability by implementing edge filters that operate in any angle rather than being constrained to fixed angles. This dimensional extension allows the OPC system to handle curvilinear patterns with edges at arbitrary orientations, resolving the technical contradiction between maintaining standard manufacturing processes and achieving effective 3D effect correction
2Measurement precision
If rigorous simulation methods are used to model mask topography effects, then accuracy improves, but computational time increases significantly
Solution Approach 1:
The patent extracts the essential feature of mask topography effects and models it using simplified any-angle edge filters rather than performing full rigorous simulations. This extraction approach captures the critical 3D effects needed for accurate correction while avoiding the excessive computational burden of complete rigorous modeling, thus achieving a balance between simulation accuracy and computational efficiency
Solution Approach 2:
The patent changes the simulation approach from rigorous full-wave analysis to an edge-filter-based model with any-angle capability. This parameter change in the simulation method maintains sufficient accuracy for OPC purposes while dramatically reducing computational time, resolving the contradiction between measurement precision and time loss
3Manufacturing precision
If any-angle edge filters are applied to curvilinear edges, then 3D mask effects are effectively corrected, but the device complexity increases
Solution Approach 1:
The patent applies local quality by implementing any-angle edge filters specifically at curvilinear edges where 3D effects are most prominent, rather than uniformly complicating the entire OPC system. This localized application of enhanced filtering capability achieves effective 3D effect correction while minimizing overall device complexity by keeping straight edges handled by simpler conventional methods
Data Source
AI summary
An optical proximity correction method includes extracting edges of a layout of a pattern on a mask, including at least one edge of the layout that is a curvilinear edge, and generating an optical image of the pattern by applying an edge filter, which includes an any-angle filter corresponding to an angle of the curvilinear edge, to the extracted edges of the layout. The any-angle filter may be generated using source sector rotation to correspond to the angle of the curvilinear edge.