Optical Proximity Correction Using Compensation Patterns
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Solution Overview
Problem
In semiconductor manufacturing, the miniaturization of devices leads to optical proximity effects during exposure, causing deformation of transfer patterns due to diffraction, and the double-exposure technique faces challenges in forming fine patterns in dense regions, resulting in the bridge phenomenon that affects product yield.
Innovation Solution
The optical proximity correction method decomposes a target pattern into two patterns with compensation patterns added to prevent bridge phenomena by adjusting edge patterns and using a double-exposure technique with masks, ensuring precise pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the interval between transparent regions in a mask is scaled down to obtain fine-sized devices, then device size is reduced, but diffraction occurs and resolution is reduced
Solution Approach 1:
The patent divides the mask pattern into multiple discrete transparent regions (first transparent region, second transparent region, third transparent region) with different interval sizes. This segmentation allows each region to be optimized independently, preventing diffraction-induced resolution loss while maintaining fine device dimensions in critical areas.
Solution Approach 2:
The patent applies different interval sizes to different regions of the mask based on local requirements. The first transparent region has a first interval size, the second has a second interval size, and the third has a third interval size. This local quality approach ensures that each region's optical characteristics are optimized for its specific function, resolving the contradiction between fine device size and resolution.
2Adaptability or versatility
If light passes through transparent regions with different interval sizes, then more pattern complexity is achieved, but light from small interval regions is influenced by large interval regions causing pattern deformation
Solution Approach 1:
The patent extracts and isolates the third transparent region (with third interval size) as a separate entity from the first and second transparent regions. By positioning the third region adjacent to both first and second regions but maintaining distinct interval characteristics, the harmful optical influence between regions is minimized while preserving pattern complexity.
Solution Approach 2:
The second transparent region (with second interval size) acts as an intermediary between the first transparent region (first interval size) and the third transparent region (third interval size). This intermediary structure mediates the optical interaction, preventing direct harmful influence between regions with significantly different interval sizes while maintaining the desired pattern complexity.
3Ease of manufacture
If a double-exposure technique is used to decompose target pattern, then current exposure systems can form the pattern, but bridge phenomenon occurs in dense regions affecting yield
Solution Approach 1:
The patent incorporates a compensation pattern (fourth transparent region) that preliminarily counteracts the bridge phenomenon before the exposure process. The compensation pattern is specifically designed to offset the optical proximity effects that would otherwise cause bridging in dense regions, thereby preventing yield loss while maintaining the benefits of double-exposure technique.
Solution Approach 2:
The patent performs preliminary pattern decomposition and compensation pattern design before the actual exposure process. The target pattern is decomposed into multiple components and compensation patterns are added in advance to prevent bridge phenomenon during exposure. This preliminary action ensures that current exposure systems can successfully form the pattern without subsequent yield issues.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves product yield by preventing bridge phenomena and ensuring precise formation of semiconductor patterns, even in dense regions, by using compensation patterns to mitigate optical proximity effects.
Implementation Method 1
When the light passes through the mask, diffraction occurs and reduces resolution
Implementation Method 2
when light passes through the transparent regions of a mask having different interval sizes, the light through the regions having small interval sizes is influenced by the transparent regions having large interval sizes and results in deformation of the transfer pattern
Data Source
AI summary
An optical proximity correction method is provided. A target pattern is provided, and then the target pattern is decomposed to a first pattern and a second pattern. The first pattern and the second pattern are alternately arranged in a dense region. Then, a compensation pattern is provided and it is determined whether the compensation pattern is added into the first pattern to become a first revised pattern, or into the second pattern to become a second revised pattern. Finally, the first revised pattern is output onto a first mask and the second revised pattern is output onto a second mask.