Model-Based OPC for Decomposed Circuit Patterns
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Solution Overview
Problem
Standard optical proximity correction (OPC) treatments for masks in double-patterning processes often result in broken contours and line breaks, especially at smaller critical dimensions like the 32 nm mode, due to stronger proximity effects.
Innovation Solution
A method for decomposing a target pattern into multiple patterns, applying OPC to each, determining imaging errors, adjusting the patterns to generate modified versions, and applying a second OPC process to ensure accurate reproduction of the target pattern without broken lines or disconnects in stitching areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If standard OPC treatment is applied to decomposed patterns in double-patterning, then the manufacturing process can proceed with standard tools, but broken contours and line breaks occur at smaller critical dimensions
Solution Approach 1:
The patent segments the OPC process into multiple stages: first applying standard OPC to decomposed patterns, then performing a second OPC pass specifically targeted at stitching areas where patterns meet. This segmentation allows the process to maintain simplicity while addressing precision issues at critical locations.
Solution Approach 2:
The patent applies different OPC treatments to different regions of the pattern. Standard OPC is applied globally to all features, while a second targeted OPC pass is applied specifically to stitching areas and other critical regions, providing local quality enhancement where needed most.
2Manufacturing precision
If double-patterning is used to achieve smaller critical dimensions, then resolution is improved, but proximity effects become stronger causing imaging errors
Solution Approach 1:
The patent applies preliminary OPC treatment to decomposed patterns before imaging, and then applies a second OPC pass to compensate for anticipated proximity effects in stitching areas. This preliminary anti-action prevents broken contours and line breaks before they occur during imaging.
Solution Approach 2:
The patent uses imaging performance analysis to identify errors in stitching areas, then feeds this information back into a second OPC pass that specifically corrects those identified problems, creating a feedback loop that eliminates proximity effect artifacts.
3Productivity
If a single OPC pass is applied to decomposed patterns, then the process is efficient, but imaging errors persist in stitching areas
Solution Approach 1:
The patent segments the OPC process into two distinct passes: a first pass that handles general pattern correction efficiently, and a second pass that focuses specifically on stitching areas. This segmentation maintains overall efficiency while targeting precision issues in critical regions.
Solution Approach 2:
The first OPC pass performs preliminary correction on all patterns, establishing a baseline correction. The second OPC pass then builds upon this preliminary action by adding targeted corrections specifically for stitching areas, ensuring both efficiency and precision.
Data Source
AI summary
A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.