Optical Proximity Correction for Double Patterning Mask Patterns
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Solution Overview
Problem
In semiconductor manufacturing, the optical proximity effect leads to resolution loss and deviations in pattern transfer due to overexposure or underexposure, particularly when using high-density mask patterns, which existing OPC methods and double patterning techniques struggle to accurately correct, resulting in potential bridge formations and inaccuracies in the final layout pattern.
Innovation Solution
A method of optical proximity correction (OPC) that involves classifying a layout pattern into sub-patterns, performing OPC calculations on each, comparing and adjusting the results to reduce excessive adjustments, and outputting the corrected sub-patterns onto masks, ensuring accurate pattern formation by inspecting and modifying the sub-patterns to align with the original layout.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If OPC calculation is performed on high-density mask patterns, then pattern transfer accuracy is improved, but excessive adjustments are made causing bridge formations and deviations from the original layout
Solution Approach 1:
The layout pattern is divided into multiple sub-layout patterns based on pattern density. OPC calculations are performed separately on each sub-layout pattern, allowing for more controlled and accurate corrections without causing excessive adjustments that lead to bridge formations. This segmentation enables precise OPC application where needed while avoiding over-correction in other areas.
2Productivity
If pattern density is increased to improve integration, then device integration is improved, but optical proximity effect causes resolution loss and pattern deviation
Solution Approach 1:
Different OPC strategies are applied to different regions of the layout pattern based on their local density characteristics. High-density regions receive optimized OPC treatment to maintain resolution, while low-density regions are handled differently to prevent over-correction. This local quality approach allows high integration with maintained pattern resolution by adapting the correction method to each region's specific needs.
Data Source
AI summary
A method of optical proximity correction (OPC) includes the following steps. A layout pattern is provided to a computer system, and the layout pattern is classified into at least a first sub-layout pattern and at least a second sub-layout pattern. Then, at least an OPC calculation is performed respectively on the first sub-layout pattern and the second sub-layout pattern to form a corrected first sub-layout pattern and a corrected second sub-layout pattern. The corrected first sub-layout pattern/the corrected second sub-layout pattern and the layout pattern are compared to select a part of the corrected first sub-layout pattern/the corrected second sub-layout pattern as a first selected pattern/the second selected pattern, and the first selected pattern/the second selected pattern is further altered to modify the corrected first sub-layout pattern/the corrected second sub-layout pattern as a third sub-layout pattern/a fourth sub-layout pattern.