Optical Proximity Correction for EUV Lithography

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Solution Overview

Problem

The lithography process in semiconductor manufacturing faces challenges with optical proximity effects due to miniaturization, leading to inaccuracies and increased process time, particularly in extreme ultraviolet (EUV) exposure techniques.

Innovation Solution

A method involving optical proximity correction (OPC) is implemented, which includes dividing patterns into partial groups, performing multiple iterations of OPC, and using a combination of first and second OPC processes to correct representative patterns and the entire design layout, considering aberration and flare effects, to reduce process time and enhance accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If optical proximity correction (OPC) is performed on the entire design layout to correct all patterns, then manufacturing precision is improved, but processing time increases significantly

Engineering Contradiction:

Improvepattern correction accuracyVSAvoidOPC processing time

Core Design Contradiction:

Manufacturing precisionVSLoss of time

Solution Approach 1:

The design layout is divided into multiple regions based on pattern density characteristics. High-density regions are identified and separated from low-density regions, allowing differential OPC processing strategies to be applied to each region, thus reducing overall processing time while maintaining correction accuracy where needed

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different OPC processing levels are applied to different regions: full OPC is applied to high-density regions where optical proximity effects are most problematic, while simplified or no OPC is applied to low-density regions, optimizing the balance between manufacturing precision and processing time

Inventive Principle:

Principle #3Local quality

2Productivity

If patterns are miniaturized to increase device density, then productivity is improved, but optical proximity effects worsen leading to reduced manufacturing precision

Engineering Contradiction:

Improvedevice densityVSAvoidpattern accuracy

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The method performs preliminary identification and classification of high-density pattern regions before executing OPC. By pre-marking regions susceptible to optical proximity effects, the subsequent OPC process can be targeted efficiently, ensuring precision is maintained at miniaturized dimensions without requiring exhaustive processing of entire layouts

Inventive Principle:

Principle #10Preliminary action

Data Source

PatentUS10962874B2Methods of manufacturing semiconductor devices, method sof performing extreme ultraviolet ray exposure, and methods of performing optical proximity correction

Publication Date: 2021.03.30 SAMSUNG ELECTRONICS CO LTD

AI summary

A method of manufacturing a semiconductor device includes performing extreme ultraviolet (EUV) lithography that uses a mask for the EUV lithography manufactured by using a design layout on which optical proximity correction (OPC) is performed, and performing the OPC includes dividing respective patterns included in the design layout into partial patterns, classifying the partial patterns into a plurality of partial pattern groups, performing a first OPC on the design layout, and performing a second OPC that is different from the first OPC on the design layout on which the first OPC is performed, wherein performing the first OPC is performed on representative patterns selected from the plurality of partial pattern groups.