Optical Proximity Correction Using Forbidden Edge Rules

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Solution Overview

Problem

In semiconductor manufacturing, the reduction in design size leads to significant optical image degradation due to diffraction effects, causing distortions in lithography patterns, which complicates the optical proximity correction process and requires substantial time and effort.

Innovation Solution

An optical proximity correction method that involves setting a forbidden edge rule based on the spacing between adjacent main patterns and adding auxiliary patterns to their side portions, where the quantity of auxiliary patterns is determined by the forbidden edge rule, reducing imaging deviations and enhancing lithography quality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If auxiliary patterns are added to all side portions of main patterns, then lithography quality and pattern fidelity are improved, but processing time and computational complexity increase

Engineering Contradiction:
Improvelithography pattern fidelityVSAvoidoptical proximity correction processing time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent applies local quality by differentiating between feasible edges and forbidden edges based on spacing constraints. Auxiliary patterns are selectively added only to feasible edges where spacing allows, rather than uniformly to all edges. This localized approach optimizes lithography quality where needed while avoiding unnecessary processing elsewhere, resolving the contradiction between precision improvement and time consumption.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent implements partial action by adding auxiliary patterns only to the extent permitted by the forbidden edge rule. When spacing between adjacent main patterns creates a forbidden edge, auxiliary pattern addition is omitted in that region. This partial application of the correction process achieves sufficient quality improvement without the excessive time cost of attempting correction everywhere.

Inventive Principle:
Principle #16Partial or excessive action

2Manufacturing precision

If auxiliary patterns are added to improve imaging quality, then pattern fidelity increases, but the complexity of the correction process increases

Engineering Contradiction:
Improvepattern fidelityVSAvoidcorrection process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies parameter changes by using the spacing between adjacent main patterns as a control parameter to determine edge feasibility. The forbidden edge rule transforms the spacing parameter into a decision criterion: when spacing is insufficient, the edge becomes forbidden and auxiliary pattern addition is prevented. This parameter-based approach simplifies the correction process logic while maintaining high pattern fidelity where applicable.

Inventive Principle:
Principle #35Parameter changes

3Productivity

If the forbidden edge rule is applied to reduce auxiliary patterns, then processing time decreases, but imaging quality may deteriorate

Engineering Contradiction:
Improvecorrection processing efficiencyVSAvoidlithography quality
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent implements feedback through the forbidden edge rule that continuously monitors spacing parameters during the correction process. When spacing indicates potential quality degradation, the rule provides feedback to prevent auxiliary pattern addition in that region. This feedback mechanism allows the system to adaptively balance processing efficiency with quality maintenance, accepting reduced auxiliary patterns where spacing constraints necessitate it.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves the fidelity and quality of lithography patterns by strategically placing auxiliary patterns, reducing the likelihood of defects and shortening the time required for optical proximity correction, thereby enhancing processing efficiency and reducing follow-up lithography defects.

Implementation Method 1

the diffraction effect of light becomes more and more obvious, resulting in optical image degradation of design patterns

Methodology Applied
Scientific EffectDiffraction: Diffraction

Data Source

PatentUS20230185182A1Optical proximity correction method and system, mask, and storage medium
Publication Date: 2023.06.15 SEMICON MFG INT (BEIJING) CORP
  • US20230185182A1 patent drawing
  • US20230185182A1 patent drawing
  • US20230185182A1 patent drawing

AI summary

The present disclosure relates to an optical proximity correction method and system. The correction method may include providing main patterns and setting a forbidden edge rule according to a spacing between adjacent main patterns. The method may further include adding an auxiliary pattern to a side portion of the main patterns. A quantity of auxiliary patterns added to side portions of the main patterns is obtained based on the forbidden edge rule. The forbidden edge rule defines whether an edge of the main patterns is a forbidden edge, and an auxiliary pattern is not added to a side portion of the forbidden edge.