Optical Proximity Correction via Hierarchical Segmentation
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Solution Overview
Problem
The increasing integration density of semiconductor devices leads to optical proximity effects such as interference and diffraction during photolithography, causing distortions in photoresist patterns and potentially resulting in malfunctioning electronic devices, which existing OPC methods struggle to accurately correct without violating mask rules.
Innovation Solution
An enhanced optical proximity correction (OPC) method that involves generating a target pattern, dividing the design pattern into segments, modifying these segments to create a fine correction pattern, and further dividing segments into sub-segments to accurately conform the simulation contour to the target pattern, thereby increasing the number of segments and improving pattern accuracy without violating mask rules.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing OPC methods are used to correct optical proximity effects, then some pattern distortion can be reduced, but the correction accuracy is insufficient and mask rules are violated
Solution Approach 1:
The design pattern is divided into multiple segments, and each segment is further divided into sub-segments. This hierarchical segmentation allows independent optimization of each segment's correction while ensuring overall pattern accuracy and mask rule compliance.
Solution Approach 2:
Different correction strategies are applied to different segments based on their local characteristics. The simulation contour is generated for each segment and compared with target patterns locally, allowing precise correction tailored to specific pattern regions while maintaining global compliance.
2Manufacturing precision
If the number of segments is increased to improve correction accuracy, then pattern precision improves, but computational complexity and processing time increase
Solution Approach 1:
The pattern is segmented into manageable units that can be processed independently. This allows parallel computation of simulation contours for different segments, reducing overall computational complexity while maintaining high precision through fine-grained control.
Solution Approach 2:
Target patterns are generated in advance for each segment before the correction process. This preliminary preparation allows the optimization algorithm to work with pre-defined targets, reducing computational burden during the actual correction phase while ensuring high precision outcomes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables highly accurate OPC, reducing distortions in photoresist patterns and improving the reliability and integration density of semiconductor devices by ensuring that the actual patterns formed on the substrate closely match the intended target patterns, thus enhancing the fabrication process.
Implementation Method 1
forming a photoresist pattern on a substrate, using a photomask manufactured based on the layout corrected by the OPC
Implementation Method 2
optical proximity effects such as interference and diffraction during photolithography, causing distortions in photoresist patterns
Implementation Method 3
optical proximity effects such as interference and diffraction during photolithography, causing distortions in photoresist patterns
Data Source
AI summary
A method of fabricating a semiconductor device includes performing optical proximity correction (OPC) on a design pattern of a layout and forming a photoresist pattern on a substrate, using a photomask manufactured based on the layout corrected by the OPC. The performing of the OPC includes generating a target pattern for the design pattern, dividing the design pattern into a plurality of segments, modifying the segments to generate a correction pattern, dividing a first segment of the segments into a plurality of sub-segments, and modifying the sub-segments to generate a fine correction pattern.