OPC Layout Segmentation for Mask Rule-Compliant Corner Correction

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Solution Overview

Problem

Existing optical proximity correction (OPC) methods in semiconductor manufacturing lack reliability and efficiency, particularly in maintaining mask rule checks (MRC) during pattern formation on semiconductor substrates.

Innovation Solution

The method involves dividing design layout edges into segments, setting a direction of progression, measuring angles, adding vertices based on these angles, and incorporating fake segments to enhance OPC, specifically using Manhattan OPC to maintain linearity and orthogonal structures, thereby improving corner rounding control.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional OPC methods are used, then the OPC process can be performed, but the reliability and predictability of the process deteriorates and mask rule checks cannot be maintained

Engineering Contradiction:

ImproveOPC process reliabilityVSAvoidpattern accuracy

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent divides layout edges into multiple segments and processes each segment independently with specific vertex addition modes. This segmentation allows precise control over corner rounding while maintaining straight line segments, thereby improving both reliability and manufacturing precision of the OPC process

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent applies different vertex addition modes to different segments based on their local characteristics (angle measurements). By setting specific modes for adding vertices to start points, end points, or both, the method achieves local optimization of corner rounding control while maintaining overall pattern accuracy

Inventive Principle:

Principle #3Local quality

2Manufacturing precision

If complex OPC methods are used to improve pattern accuracy, then manufacturing precision improves, but process complexity and computational burden increase

Engineering Contradiction:

Improvepattern accuracyVSAvoidOPC process complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

By dividing the layout into segments and applying simple vertex addition rules to each segment based on angle measurements, the patent achieves complex pattern accuracy improvement through a structured, manageable process that reduces overall computational complexity

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent uses angle measurements of segments as a key parameter to determine vertex addition modes. This parameter-based approach simplifies the decision-making process in OPC, making the method more predictable and easier to implement while maintaining high pattern accuracy

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS20260063984A1Optical proximity correction method and mask manufacturing method including the OPC method

Publication Date: 2026.03.05 SAMSUNG ELECTRONICS CO LTD

AI summary

Provided is an optical proximity correction (OPC) method. The OPC method includes inputting an OPC target design layout, dividing edges of an input OPC target design layout into a plurality of segments, setting a direction of progression of the segments, measuring angles of the segments with respect to the direction of progression, setting a mode for adding vertices according to angles measured in the measuring, adding vertices according to a set mode, adding at least one fake segment extending to an added vertex, and performing OPC based on an added fake segment.