Optical Proximity Correction for Line Pattern Alignment

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Solution Overview

Problem

As semiconductor devices shrink in scale, achieving precise alignment and reliable interconnections between conductive layers becomes challenging due to critical dimension requirements and alignment deviations, leading to incomplete stacking and performance issues like leakage and reduced process windows.

Innovation Solution

The method involves modifying integrated circuit layouts with parallel line patterns by adding convex and concave portions on either side, using a computer system to ensure complete stacking of interconnect patterns while maintaining critical dimension uniformity and process window integrity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the critical dimension is reduced to meet scaling requirements, then device integration is improved, but alignment precision between layers deteriorates

Engineering Contradiction:
Improvedevice integrationVSAvoidalignment precision
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent applies optical proximity correction (OPC) to pre-modify the line patterns before fabrication, adding convex and concave portions to compensate for anticipated alignment deviations. This preliminary action ensures that even when alignment errors occur during multi-layer fabrication, the interconnect patterns still overlap sufficiently to maintain reliable connections.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent modifies the geometric parameters of line patterns by introducing convex and concave portions with specific dimensions. These parameter changes increase the overlapping area between interconnect patterns, providing a larger process window that tolerates alignment variations while maintaining manufacturing feasibility.

Inventive Principle:
Principle #35Parameter changes

2Ease of manufacture

If conventional line patterns are used without modification, then manufacturing simplicity is maintained, but interconnect reliability deteriorates due to incomplete stacking

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidinterconnect reliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent applies local quality modification by adding convex and concave portions only at specific locations where interconnect overlap is critical. The majority of the line pattern remains unchanged, maintaining simple manufacturing processes, while localized modifications ensure reliable interconnect stacking in key areas.

Inventive Principle:
Principle #3Local quality

3Reliability

If alignment tolerance is reduced to achieve precise stacking, then interconnect reliability is improved, but process window deteriorates

Engineering Contradiction:
Improveinterconnect reliabilityVSAvoidprocess window
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent uses OPC to pre-compensate for alignment variations by modifying line patterns with convex and concave portions. This preliminary action creates a design that is inherently more tolerant to alignment errors, effectively enlarging the process window without requiring tighter control during fabrication.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS9530731B2Method of optical proximity correction for modifying line patterns and integrated circuits with line patterns modified by the same
Publication Date: 2016.12.27 UNITED MICROELECTRONICS CORP
  • US9530731B2 patent drawing
  • US9530731B2 patent drawing
  • US9530731B2 patent drawing

AI summary

A method of optical proximity correction executed by a computer system for modifying line patterns includes the following steps. First, providing an integrated circuit layout with parallel line patterns and interconnect patterns disposed corresponding to the parallel line patterns. Then, using the computer to modify the integrated circuit layout based on a position of the interconnect patterns so as to generate a convex portion and a concave portion respectively on two sides of each of the parallel line patterns. Portions of the line pattern in front of and behind the convex portion and the concave portion are straight lines and have an identical critical dimension.