Optical Proximity Correction for Mask Pattern Diffraction
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Solution Overview
Problem
In semiconductor manufacturing, the increasing miniaturization of devices leads to issues with light diffraction during the exposure process, causing pattern peeling problems due to the scaling down of transparent regions in masks, which existing optical proximity correction techniques fail to adequately address.
Innovation Solution
An optical proximity correction method that modifies the mask pattern by adjusting the arrangement of patterns and spaces between them, specifically altering the second space to be no longer 2.5 to 3.5 times the value of the first width, thereby preventing light diffraction and pattern peeling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the interval between transparent regions in a mask is scaled down with device size to obtain fine-sized devices, then device miniaturization is achieved, but light diffraction occurs causing pattern peeling problems
Solution Approach 1:
The patent applies optical proximity correction (OPC) techniques to pre-modify the mask pattern before exposure. Specifically, it detects regions where the second space is 2.5 to 3.5 times the first width and adjusts the transparent region arrangement in advance to prevent light diffraction and pattern peeling during exposure
Solution Approach 2:
The patent changes the geometric parameters of the mask pattern by adjusting the arrangement of transparent regions. It specifically modifies cases where the second space equals 2.5 to 3.5 times the first width by altering the interval between transparent regions, thereby changing the optical parameters to prevent diffraction phenomena
2Manufacturing precision
If existing optical proximity correction techniques are used to improve dimensional precision, then pattern accuracy is enhanced, but pattern peeling problems due to light diffraction persist
Solution Approach 1:
The patent applies local quality by specifically targeting regions where the second space is 2.5 to 3.5 times the first width. It selectively modifies only these problematic regions by adjusting the interval between transparent regions, while leaving other regions unchanged, thereby locally preventing light diffraction and pattern peeling
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents light diffraction from the second gap, ensuring accurate pattern transfer onto the semiconductor wafer by modifying the mask pattern arrangement, thereby maintaining dimensional precision and avoiding pattern peeling issues.
Implementation Method 1
The photo-mask pattern is then proportionally transferred to a photoresist layer positioned on the semiconductor wafer
Implementation Method 2
the phenomenon of light diffraction during an exposure process
Data Source
AI summary
The present invention provides an OPC method. First, a mask pattern is provided. A first region and a second region are detected in the mask pattern. The mask pattern comprises at least a first pattern in the first region and a second pattern in the second pattern, and the first pattern with a first width, a first gap with a first space, the second pattern with a second width and a second gap with a second space are disposed in sequence, wherein the second space value is substantially 2.5 to 3.5 times the value of the first width. Then, a modification process is performed by changing the arrangement of the mask pattern thereby making the mask pattern become a revised pattern, so the first pattern is not influenced by light passing through the second gap during an exposure process. Finally, the revised pattern is outputted onto a mask.