Optical Proximity Correction Model Database Expansion
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Solution Overview
Problem
Existing optical proximity correction methods in semiconductor manufacturing are limited by the inability to include all new circuit patterns, leading to pattern distortion issues during photolithography, especially at critical dimensions below 0.13 μm, due to the optical proximity effect.
Innovation Solution
An enhanced optical proximity correction method that involves obtaining a customer target pattern, performing an optical proximity correction process, and storing light intensity information and coherence radius in a database if it does not match existing models, allowing for the generation of actual patterns that compensate for distortion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the critical dimension of ICs is reduced to enable millions of devices per chip, then the device density and functionality are improved, but pattern distortion caused by optical proximity effect worsens
Solution Approach 1:
The patent applies preliminary optical proximity correction to the mask patterns before photolithography. By pre-modifying the mask patterns based on predicted optical effects, the system compensates for anticipated pattern distortion, enabling accurate reproduction of sub-0.13μm features despite diffraction and energy loss in the imaging system
Solution Approach 2:
The patent modifies mask pattern parameters (geometry, dimensions, spacing) to compensate for optical proximity effects. By adjusting these parameters in advance, the system counteracts the rounding and shrinking effects caused by optical diffraction, maintaining manufacturing precision at reduced critical dimensions
2Device complexity
If the optical proximity correction model database includes only existing patterns, then the database size and complexity are reduced, but the ability to handle new circuit patterns is limited
Solution Approach 1:
The patent creates new OPC model entries by copying and adapting existing model structures to new circuit patterns. Instead of requiring complete manual characterization of every possible pattern, the system generates correction models by replicating and modifying proven patterns, expanding database versatility while maintaining manageable complexity
Solution Approach 2:
The patent develops universal OPC model templates that can be applied to multiple different circuit patterns. By creating multi-functional correction models that work across various pattern types, the system expands the database's ability to handle new designs without proportionally increasing the number of individual pattern-specific models
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively corrects pattern distortions by expanding the coverage of the optical proximity correction model database, ensuring accurate semiconductor structure formation by comparing and merging light intensity information, thereby improving the precision of semiconductor manufacturing.
Implementation Method 1
because of the limitation of the imaging system caused by the optical diffraction and the non-linear filtering when the critical dimension becomes significantly small
Implementation Method 2
the structure of ICs on the mask may be transferred onto the wafer using an ultraviolet light with a certain wavelength generated by a photolithography apparatus
Data Source
AI summary
An enhanced optical proximity correction method is provided. The method includes providing a mask substrate and a substrate and obtaining a customer target pattern. The method also includes obtaining a production layout by performing an optical proximity correction process onto the customer target pattern using the pattern and a pattern formed on the substrate. Further, the method includes obtaining the light intensity information instead of dimension of the production layout. Further, the method includes storing the light intensity information of the production layout, the production layout and surrounding coherence radius in an optical proximity correction model database if the light intensity information of the production layout does not coincide with light intensity information of original modeling patterns already stored in the optical proximity correction model database. Further, the method also includes generating actual patterns using the stored optical proximity correction model corresponding to the stored light intensity information.