OPC Model Using Region-Specific Aerial Image Functions
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Solution Overview
Problem
In semiconductor manufacturing, the Optical Proximity Effect (OPE) leads to variations in patterns on substrates during photolithography, resulting in poor quality semiconductor devices, especially when forming structures with insulators, as standard OPC models do not account for the complex light interactions with insulation structures like STIs.
Innovation Solution
An OPC method that involves establishing an OPC model by obtaining aerial image light intensity functions across different substrate regions, including those with insulation structures, and adjusting the model through iterative simulation and fabrication processes to compensate for light diffraction and reflection effects, ensuring the final pattern aligns with the target pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If standard OPC models are used for pattern formation, then the manufacturing process is simple, but the pattern quality deteriorates due to unaccounted light interactions with insulation structures
Solution Approach 1:
The patent applies local quality by creating region-specific aerial image light intensity functions for different substrate areas. The substrate is divided into multiple regions (first region with insulator, second region without insulator, third region with different insulator configuration), and each region has its own optimized OPC model parameters. This allows the system to account for local optical variations caused by insulation structures while maintaining overall manufacturing efficiency.
Solution Approach 2:
The patent segments the substrate into distinct regions based on the presence and configuration of insulation structures. By obtaining separate aerial image light intensity functions for each region (first region with STI, second region without STI, third region with different STI), the complex optical problem is divided into manageable segments that can be optimized independently and then combined.
2Manufacturing precision
If iterative simulation and fabrication processes are used to optimize the OPC model, then the pattern fidelity improves, but the manufacturing time increases
Solution Approach 1:
The patent applies preliminary action by performing iterative simulation and optimization processes during the model development phase before actual mass production. Multiple testing patterns are simulated and compared against target patterns to pre-optimize the aerial image light intensity functions and OPC model parameters. This preliminary optimization ensures high pattern fidelity in subsequent production runs without requiring iterative adjustments during manufacturing.
Solution Approach 2:
The patent implements feedback mechanisms by comparing simulated final patterns with target patterns during the optimization process. The aerial image light intensity functions are adjusted based on the differences between simulated and desired patterns. This feedback loop continues iteratively until the simulated patterns closely match the target patterns, ensuring high fidelity while systematically reducing optimization time.
3Reliability
If region-specific aerial image light intensity functions are obtained, then the optical proximity effect compensation improves, but the measurement and modeling complexity increases
Solution Approach 1:
The patent uses copying by creating simulated aerial image light intensity functions through computational modeling rather than direct physical measurement. Testing patterns are simulated using the optical model to generate expected aerial images, which are then compared with actual measurements. This copying approach allows the system to work with multiple region-specific models without proportionally increasing measurement complexity, as simulations can be generated from a single set of optical parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the quality of semiconductor device patterns by accurately accounting for the optical proximity effects, reducing variations and improving the fidelity of the fabricated patterns, even in the presence of insulation structures, thereby enhancing the production yield and device performance.
Implementation Method 1
As the feature size decreasing, light diffraction effect in photolithography becomes more and more obvious
Implementation Method 2
adjusting the OPC model through iterative simulation and fabrication processes to compensate for light diffraction and reflection effects
Data Source
AI summary
An Optical Proximity Correction (OPC) method is provided for compensating the Optical Proximity Effect (OPE) influence. The method include providing a substrate having at least one semiconductor structure and with a plurality of regions, providing a target pattern to be formed on the substrate, and respectively obtaining aerial image light intensity functions of the plurality of regions of the substrate. The method also includes establishing an OPC model based on the aerial image light intensity functions of the plurality of regions, and performing an OPC process to the target pattern by using the OPC model to adjust the target pattern factoring in optical effect of the plurality of regions.


