OPC Modeling with Sub-layout Transmittance for Topography Effects

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Solution Overview

Problem

Current semiconductor manufacturing methods fail to accurately predict and correct for topography effects during the optical proximity correction (OPC) process, leading to distorted patterns and potential operational failures in semiconductor devices.

Innovation Solution

An OPC modeling method that selects transmittance values for sub-layout patterns to generate a final model signal, accounting for topography effects caused by planar pattern structures, which is used to perform an OPC process and correct the layout before forming photoresist patterns on a substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional OPC modeling methods are used, then the OPC process can be performed, but topography effects cannot be accurately predicted leading to distorted patterns

Engineering Contradiction:
Improveprediction accuracy of topography effectsVSAvoidpattern formation accuracy
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The layout is divided into multiple sub-layouts corresponding to different layers. Each sub-layout is assigned a specific transmittance value representing the optical properties of that layer. This segmentation allows the OPC model to predict topography effects by considering the cumulative optical transmission through multiple layers with different transmittance characteristics.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention introduces transmittance values as a new parameter for each sub-layout pattern. By assigning different transmittance values to different layers (e.g., metal layers, insulator layers), the OPC model can account for varying optical properties throughout the stack, enabling accurate prediction of topography effects that affect pattern formation.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If transmittance values are selected for sub-layout patterns to predict topography effects, then pattern formation accuracy is improved, but OPC model complexity increases

Engineering Contradiction:
Improvephotoresist pattern accuracyVSAvoidOPC model complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The complex multi-layer structure is segmented into discrete sub-layouts, each with an associated transmittance value. This segmentation simplifies the modeling approach by breaking down the complex optical interaction into manageable components that can be processed independently and then combined.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Instead of modeling the complete complex optical physics of multi-layer interactions, the invention creates a simplified copy or representation of the optical system using transmittance values for each layer. This simplified model captures the essential topography effects without requiring full optical simulation complexity.

Inventive Principle:
Principle #26Copying

Data Source

PatentUS11023651B2Optical proximity correction (OPC) modeling methods and methods for manufacturing semiconductor device using the same
Publication Date: 2021.06.01 SAMSUNG ELECTRONICS CO LTD
  • US11023651B2 patent drawing
  • US11023651B2 patent drawing
  • US11023651B2 patent drawing

AI summary

A method for manufacturing a semiconductor device includes performing an optical proximity correction (OPC) process on a designed layout based on a final model signal obtained according to an OPC modeling process to generate a corrected layout, the OPC modeling process including, selecting a transmittance value of a sub-layout pattern of a sub-layout included in a target layout, the transmittance value being a parameter of an OPC model and representing an intensity of light that transmits through a photomask, and generating a final model signal based on the transmittance value of the sub-layout pattern, and forming a photoresist pattern on a substrate using the photomask generated based on the corrected layout.