Optical Proximity Correction by Region Density
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Solution Overview
Problem
Conventional optical proximity correction (OPC) methods require repeated iterations and increased computer resource loading, leading to delayed output and higher manufacturing costs due to the need for extensive corrections in high-density mask patterns.
Innovation Solution
Classifying layout patterns into high-density and low-density regions, with more OPC calculations performed on the high-density regions and fewer or no calculations on the low-density regions, allowing for quicker corrections and reduced computational load.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If repeated OPC calculations are performed on all regions of the mask pattern, then the manufacturing precision is improved, but the productivity deteriorates due to delayed output and increased processing time
Solution Approach 1:
The mask pattern is divided into multiple regions based on pattern density characteristics. High-density regions are identified and separated from low-density regions, allowing differential processing strategies to be applied to each region type, thereby improving overall processing efficiency while maintaining correction accuracy where needed
Solution Approach 2:
Different numbers of OPC calculation iterations are applied to different regions based on their specific needs. High-density regions receive more iterations (e.g., 3-5 times) to ensure correction accuracy, while low-density regions receive fewer iterations (e.g., 1-2 times), optimizing the balance between precision and processing speed for each local area
2Manufacturing precision
If repeated OPC calculations are performed on all regions of the mask pattern, then the manufacturing precision is improved, but the device complexity increases due to higher computer resource loading
Solution Approach 1:
The computation domain is segmented into high-density and low-density regions. This segmentation allows the system to allocate computational resources dynamically, performing intensive calculations only where pattern complexity demands it, rather than uniformly across the entire mask pattern, thus reducing overall device complexity and resource loading
Solution Approach 2:
The method applies partial action by performing fewer OPC iterations in low-density regions where high precision is less critical, while concentrating computational effort on high-density regions. This selective approach reduces total computational load and device complexity while maintaining sufficient precision for each region type
3Manufacturing precision
If extensive OPC corrections are performed on high-density mask patterns, then the manufacturing precision is improved, but the loss of time increases due to delayed mask output
Solution Approach 1:
By segmenting the mask pattern into high-density and low-density regions, the method enables parallel or prioritized processing where high-density regions receive necessary correction iterations while low-density regions are processed more quickly with fewer iterations, reducing total processing time while maintaining precision where it matters most
Solution Approach 2:
The method applies partial action by performing the full sequence of OPC corrections only on high-density regions that require them for accurate pattern transfer, while applying reduced corrections or skipping corrections on low-density regions, thereby significantly reducing overall processing time without compromising critical pattern fidelity
Data Source
AI summary
A method of optical proximity correction (OPC) includes the following steps. At first, a layout pattern is provided to a computer system. Subsequently, the layout pattern is classified into at least a first region and at least a second region. Then, several iterations of OPC calculations are performed to the layout pattern, and a total number of OPC calculations performed in the first region is substantially larger than a total number of OPC calculations performed in the second region. Afterwards, a corrected layout pattern is outputted through the computer system onto a mask.