Optical Proximity Correction with Retargeted Pattern Refinement
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Solution Overview
Problem
The increasing integration density of semiconductor devices poses challenges in achieving precise pattern formation due to optical proximity effects during photolithography, leading to potential distortions and malfunctions in electronic devices.
Innovation Solution
An optical proximity correction (OPC) method is employed, involving multiple iterations of OPC operations to generate correction patterns based on target and retarget patterns, ensuring precise alignment and compensation of edges to minimize target errors, thereby improving the accuracy of photoresist pattern formation on substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If optical proximity correction (OPC) operation is performed on a design pattern, then manufacturing precision of photoresist pattern is improved, but device complexity of the OPC process increases
Solution Approach 1:
The OPC process is divided into multiple discrete operations: generating target pattern, performing first OPC operation, measuring first target error, generating retarget pattern, and performing second OPC operation. Each operation handles a specific aspect of the correction process, making the complex overall task more manageable and systematic while achieving high precision pattern formation
Solution Approach 2:
The process incorporates feedback loops where target errors are measured by comparing simulation images with target patterns, and correction patterns are iteratively adjusted based on measured errors. The retarget pattern generation uses first target error measurements to refine subsequent correction patterns, creating a closed-loop system that continuously improves manufacturing precision
2Manufacturing precision
If multiple iterations of OPC operations are performed, then manufacturing precision is improved, but loss of time in the fabrication process increases
Solution Approach 1:
The process performs preliminary OPC operations and error measurements before final pattern formation. By conducting the first OPC operation and measuring target errors in advance, the system prepares correction data that guides subsequent fabrication steps, reducing the need for iterative adjustments during actual manufacturing and thereby reducing overall time loss
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the fabrication of highly integrated and reliable semiconductor devices with extremely high precision, reducing process defects and enhancing integration density and reliability by iteratively correcting for optical proximity errors.
Implementation Method 1
forming a photoresist pattern on a substrate, using a photomask which is manufactured with the layout corrected by the OPC operation
Implementation Method 2
performing an optical proximity correction (OPC) operation on a design pattern of a layout
Data Source
AI summary
A method of fabricating a semiconductor device includes performing an optical proximity correction (OPC) operation on a design pattern of a layout, and forming a photoresist pattern on a substrate, using a photomask which is manufactured with the layout corrected by the OPC operation. The OPC operation includes generating a target pattern based on the design pattern, performing a first OPC operation, based on the target pattern, to generate a first correction pattern, measuring a target error by comparing a first simulation image of the first correction pattern with the target pattern, generating a retarget pattern from the target pattern, based on the target error, and performing a second OPC operation, based on the retarget pattern, to generate a second correction pattern.